W41292F6200R1 — SEMICONDUCTOR DEVICE,DIODE

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

W41292F6200R1: SEMICONDUCTOR DEVICE,DIODE.

The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: SILICON SEMICONDUCTOR, overall_length: 0.450 INCHES MAXIMUM IN, mounting_method: THREADED STUD(S), overall_diameter: 0.667 INCHES MAXIMUM IN, special_features: WEAPON SYSTEM ESSENTIAL, features_provided: HERMETICALLY SEALED CASE. This part is cataloged in the U.S.

Government catalog under NSN 5961-00-905-9689, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

W41292F6200R1

NSN: 5961-00-905-9689
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: C0426 — HENSOLDT SENSORS GMBH (DEU)

SPECIFICATIONS

material	SILICON SEMICONDUCTOR
overall_length	0.450 INCHES MAXIMUM IN
mounting_method	THREADED STUD(S)
overall_diameter	0.667 INCHES MAXIMUM IN
special_features	WEAPON SYSTEM ESSENTIAL
features_provided	HERMETICALLY SEALED CASE
nominal_thread_size	0.250 INCHES IN
thread_series_designator	UNF
mounting_facility_quantity	1
overall_width_across_flats	0.687 INCHES NOMINAL IN
terminal_type_and_quantity	1 TAB, SOLDER LUG AND 1 THREADED STUD
specification/standard_data	80131-RELEASE4834 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
NSN	5961-00-905-9689

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM REVERSE VOLTAGE, PEAK

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 190.0 CELSIUS JUNCTION DEGC

•

MOUNTING FACILITY QUANTITY: 1

•

OVERALL DIAMETER: 0.667 INCHES MAXIMUM IN

•

MOUNTING METHOD: THREADED STUD(S)

•

CRITICALITY CODE JUSTIFICATION: FEAT

•

FEATURES PROVIDED: HERMETICALLY SEALED CASE

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	1000.0 MAXIMUM REVERSE VOLTAGE, PEAK
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	190.0 CELSIUS JUNCTION DEGC
MOUNTING FACILITY QUANTITY	1
OVERALL DIAMETER	0.667 INCHES MAXIMUM IN
MOUNTING METHOD	THREADED STUD(S)
CRITICALITY CODE JUSTIFICATION	FEAT
OVERALL LENGTH	0.450 INCHES MAXIMUM IN
FEATURES PROVIDED	HERMETICALLY SEALED CASE
OVERALL WIDTH ACROSS FLATS	0.687 INCHES NOMINAL IN
NOMINAL THREAD SIZE	0.250 INCHES IN

SUBSTITUTES & CROSS-REFERENCES 4

5961PL0905214Reference document

Same NSN cross-reference

Reference document — Informative reference only

1N4529Reference document

Same NSN cross-reference

Reference document — Design control — primary reference

1151054Reference document

Same NSN cross-reference

Reference document — Advisory reference — outside the item-of-supply concept

1N4529AReference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusCancelled· U.S. Government catalog

Acquisition advice: Insurance item — stocked against contingency demandNo demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is W41292F6200R1?

W41292F6200R1 is a SEMICONDUCTOR DEVICE,DIODE.

What parts can replace W41292F6200R1?

There are 4 known substitutes for W41292F6200R1: 5961PL0905214, 1N4529, 1151054 and 1 more. Substitute compatibility should be verified for your specific system.

What is the NSN for W41292F6200R1?

W41292F6200R1 is cataloged in the U.S. Government catalog under NSN 5961-00-905-9689. This indicates validated use in U.S. government and defense supply chains.

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W41292F6200R1 — SEMICONDUCTOR DEVICE,DIODE

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