VS16RIA10 — SEMICONDUCTOR DEVICE,THYRISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

VS16RIA10: SEMICONDUCTOR DEVICE,THYRISTOR.

The SEMICONDUCTOR DEVICE,THYRISTOR is a the manufacturer industrial component. Key specifications include overall_length: 1.645 INCHES MAXIMUM IN, mounting_method: THREADED STUD(S), special_features: JUNCTION PATTERN ARRANGEMENT: PNPN, features_provided: HERMETICALLY SEALED CASE, nominal_thread_size: 0.250 INCHES IN, internal_configuration: JUNCTION CONTACT. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-321-8986, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

VS16RIA10

NSN: 5961-01-321-8986
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 18612 — VISHAY INTERTECHNOLOGY, INC. (USA)

SPECIFICATIONS

overall_length	1.645 INCHES MAXIMUM IN
mounting_method	THREADED STUD(S)
special_features	JUNCTION PATTERN ARRANGEMENT: PNPN
features_provided	HERMETICALLY SEALED CASE
nominal_thread_size	0.250 INCHES IN
internal_configuration	JUNCTION CONTACT
semiconductor_material	SILICON
thread_series_designator	UNF
mounting_facility_quantity	1
overall_width_across_flats	0.650 INCHES MAXIMUM IN
terminal_type_and_quantity	2 TAB, SOLDER LUG AND 1 THREADED STUD
power_rating_per_characteristic	86.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
NSN	5961-01-321-8986

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 100.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE AND 100.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 CELSIUS JUNCTION DEGC

•

MOUNTING FACILITY QUANTITY: 1

•

MOUNTING METHOD: THREADED STUD(S)

•

SEMICONDUCTOR MATERIAL: SILICON

•

INTERNAL CONFIGURATION: JUNCTION CONTACT

•

FEATURES PROVIDED: HERMETICALLY SEALED CASE

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	150.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 100.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE AND 100.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	125.0 CELSIUS JUNCTION DEGC
MOUNTING FACILITY QUANTITY	1
MOUNTING METHOD	THREADED STUD(S)
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	1.645 INCHES MAXIMUM IN
INTERNAL CONFIGURATION	JUNCTION CONTACT
FEATURES PROVIDED	HERMETICALLY SEALED CASE
OVERALL WIDTH ACROSS FLATS	0.650 INCHES MAXIMUM IN
NOMINAL THREAD SIZE	0.250 INCHES IN

SUBSTITUTES & CROSS-REFERENCES 2

5542920Reference document

Same NSN cross-reference

Reference document — Secondary reference

16RIA10Reference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Normally procured from the manufacturer (OEM)No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is VS16RIA10?

VS16RIA10 is a SEMICONDUCTOR DEVICE,THYRISTOR.

What parts can replace VS16RIA10?

There are 2 known substitutes for VS16RIA10: 5542920, 16RIA10. Substitute compatibility should be verified for your specific system.

What is the NSN for VS16RIA10?

VS16RIA10 is cataloged in the U.S. Government catalog under NSN 5961-01-321-8986. This indicates validated use in U.S. government and defense supply chains.

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VS16RIA10 — SEMICONDUCTOR DEVICE,THYRISTOR

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