VRS650 — SEMICONDUCTOR DEVICES,UNITIZED

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

VRS650: SEMICONDUCTOR DEVICES,UNITIZED.

The SEMICONDUCTOR DEVICES,UNITIZED is a the manufacturer industrial component. Key specifications include overall_length: 0.190 INCHES NOMINAL IN, mounting_method: TERMINAL, terminal_length: 0.500 INCHES MINIMUM IN, overall_diameter: 0.220 INCHES NOMINAL IN, special_features: ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN, semiconductor_material: SILICON ALL SEMICONDUCTOR DEVICE DIODE. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-285-9901, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

VRS650

NSN: 5961-01-285-9901
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 86831 — SAFRAN ELECTRONICS & DEFENSE, AVIONICS USA, LLC DBA USE CAGE CODE 879B2 FOR CATALOGING (USA)

SPECIFICATIONS

overall_length	0.190 INCHES NOMINAL IN
mounting_method	TERMINAL
terminal_length	0.500 INCHES MINIMUM IN
overall_diameter	0.220 INCHES NOMINAL IN
special_features	ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN
semiconductor_material	SILICON ALL SEMICONDUCTOR DEVICE DIODE
terminal_circle_diameter	0.100 INCHES NOMINAL IN
terminal_type_and_quantity	4 UNINSULATED WIRE LEAD
component_name_and_quantity	2 SEMICONDUCTOR DEVICE DIODE
power_rating_per_characteristic	400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE
current_rating_per_characteristic	50.00 MILLIAMPERES MAXIMUM FORWARD GATE CURRENT ALL SEMICONDUCTOR DEVICE DIODE
voltage_rating_in_volts_per_characteristic	-20.0 NOMINAL REVERSE VOLTAGE, INSTANTANEOUS ALL SEMICONDUCTOR DEVICE DIODE
NSN	5961-01-285-9901

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -20.0 NOMINAL REVERSE VOLTAGE, INSTANTANEOUS ALL SEMICONDUCTOR DEVICE DIODE

•

OVERALL DIAMETER: 0.220 INCHES NOMINAL IN

•

TERMINAL LENGTH: 0.500 INCHES MINIMUM IN

•

MOUNTING METHOD: TERMINAL

•

SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE

•

COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE

•

CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM FORWARD GATE CURRENT ALL SEMICONDUCTOR DEVICE DIODE

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	-20.0 NOMINAL REVERSE VOLTAGE, INSTANTANEOUS ALL SEMICONDUCTOR DEVICE DIODE
OVERALL DIAMETER	0.220 INCHES NOMINAL IN
TERMINAL LENGTH	0.500 INCHES MINIMUM IN
MOUNTING METHOD	TERMINAL
SEMICONDUCTOR MATERIAL	SILICON ALL SEMICONDUCTOR DEVICE DIODE
OVERALL LENGTH	0.190 INCHES NOMINAL IN
COMPONENT NAME AND QUANTITY	2 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC	50.00 MILLIAMPERES MAXIMUM FORWARD GATE CURRENT ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES	ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL TYPE AND QUANTITY	4 UNINSULATED WIRE LEAD

SUBSTITUTES & CROSS-REFERENCES 1

DPAD-2Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Terminal item — no further procurement; issued until stock is exhaustedNo demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is VRS650?

VRS650 is a SEMICONDUCTOR DEVICES,UNITIZED.

What parts can replace VRS650?

There is 1 known substitute for VRS650: DPAD-2. Substitute compatibility should be verified for your specific system.

What is the NSN for VRS650?

VRS650 is cataloged in the U.S. Government catalog under NSN 5961-01-285-9901. This indicates validated use in U.S. government and defense supply chains.

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VRS650 — SEMICONDUCTOR DEVICES,UNITIZED

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