VQ1006J — SEMICONDUCTOR DEVICES,UNITIZED

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

VQ1006J: SEMICONDUCTOR DEVICES,UNITIZED.

The SEMICONDUCTOR DEVICES,UNITIZED is a the manufacturer industrial component. Key specifications include material: PLASTIC OR CERAMIC ENCLOSURE, overall_width: 0.320 INCHES MAXIMUM IN, overall_height: 0.308 INCHES MAXIMUM IN, overall_length: 0.808 INCHES MAXIMUM IN, mounting_method: PRESS FIT, semiconductor_material: SILICON ALL TRANSISTOR. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-232-7675, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

VQ1006J

NSN: 5961-01-232-7675
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 17856 — SILICONIX INCORPORATED DIV SILICONIX (USA)

SPECIFICATIONS

material	PLASTIC OR CERAMIC ENCLOSURE
overall_width	0.320 INCHES MAXIMUM IN
overall_height	0.308 INCHES MAXIMUM IN
overall_length	0.808 INCHES MAXIMUM IN
mounting_method	PRESS FIT
semiconductor_material	SILICON ALL TRANSISTOR
terminal_type_and_quantity	14 RIBBON
component_name_and_quantity	4 TRANSISTOR
power_rating_per_characteristic	2.0 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
current_rating_per_characteristic	400.00 MILLIAMPERES NOMINAL DRAIN CURRENT ALL TRANSISTOR
NSN	5961-01-232-7675

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 90.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 40.0 NOMINAL BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE ALL TRANSISTOR

•

MOUNTING METHOD: PRESS FIT

•

SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR

•

COMPONENT NAME AND QUANTITY: 4 TRANSISTOR

•

CURRENT RATING PER CHARACTERISTIC: 400.00 MILLIAMPERES NOMINAL DRAIN CURRENT ALL TRANSISTOR

TECHNICAL CHARACTERISTICS

OVERALL HEIGHT	0.308 INCHES MAXIMUM IN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	90.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 40.0 NOMINAL BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE ALL TRANSISTOR
MOUNTING METHOD	PRESS FIT
SEMICONDUCTOR MATERIAL	SILICON ALL TRANSISTOR
OVERALL LENGTH	0.808 INCHES MAXIMUM IN
COMPONENT NAME AND QUANTITY	4 TRANSISTOR
OVERALL WIDTH	0.320 INCHES MAXIMUM IN
CURRENT RATING PER CHARACTERISTIC	400.00 MILLIAMPERES NOMINAL DRAIN CURRENT ALL TRANSISTOR
MATERIAL	PLASTIC OR CERAMIC ENCLOSURE
TERMINAL TYPE AND QUANTITY	14 RIBBON

OTHER ITEMS IN FSC 5961 — Semiconductor Devices and Associated Hardware

Items in the same Federal Supply class. No interchangeability or substitution relationship is implied.

5961-00-000-0150 5961-00-000-4541 5961-00-000-5400 5961-00-000-7614 5961-00-000-8760 5961-00-001-1352 5961-00-001-2624 5961-00-001-2978

SUBSTITUTES & CROSS-REFERENCES 1

VA-85-0567-1Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Normally procured from the manufacturer (OEM)No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is VQ1006J?

VQ1006J is a SEMICONDUCTOR DEVICES,UNITIZED.

What parts can replace VQ1006J?

There is 1 known substitute for VQ1006J: VA-85-0567-1. Substitute compatibility should be verified for your specific system.

What is the NSN for VQ1006J?

VQ1006J is cataloged in the U.S. Government catalog under NSN 5961-01-232-7675. This indicates validated use in U.S. government and defense supply chains.

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