VG021085-015: MICROCIRCUIT,MEMORY.
The MICROCIRCUIT,MEMORY is a the manufacturer memory module engineered for enterprise server and workstation platforms requiring validated, high-reliability memory. Key specifications include features_provided: ELECTROSTATIC SENSITIVE AND ULTRAVIOLET ERASABLE AND MONOLITHIC AND PROGRAMMABLE, output_logic_form: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC, inclosure_material: SILICON, memory_device_type: EPROM, storage_temp_range: -65.0 TO 150.0 CELSIUS DEGC, test_data_document: 96906-MIL-STD883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.).. This part is cataloged in the U.S.
Government catalog under NSN 5962-01-413-6857, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| special_features | ALTERED ITEM, MAKE FROM P/N 5962-8953702YX, DWG NAME MICROCIRCUITS, MEMORY, DIGITAL CMOS, 16K X 8 UV EPROM, MONOLITHIC SILICON; ENDURANCE 25 CYCLES/BYTE, MINIMUM |
| features_provided | ELECTROSTATIC SENSITIVE AND ULTRAVIOLET ERASABLE AND MONOLITHIC AND PROGRAMMABLE |
| output_logic_form | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| inclosure_material | SILICON |
| memory_device_type | EPROM |
| storage_temp_range | -65.0 TO 150.0 CELSIUS DEGC |
| test_data_document | 96906-MIL-STD883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| operating_temp_range | -55.0 TO 125.0 CELSIUS DEGC |
| end_item_identification | AGM-130/TVGS |
| inclosure_configuration | DUAL-IN-LINE |
| terminal_surface_treatment | SOLDER |
| time_rating_per_chacteristic | 55.00 NANOSECONDS NOMINAL ACCESS NS |
| NSN | 5962-01-413-6857 |
| INCLOSURE MATERIAL | SILICON |
| TERMINAL SURFACE TREATMENT | SOLDER |
| CRITICALITY CODE JUSTIFICATION | CBBL |
| FEATURES PROVIDED | ELECTROSTATIC SENSITIVE AND ULTRAVIOLET ERASABLE AND MONOLITHIC AND PROGRAMMABLE |
| INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| MEMORY DEVICE TYPE | EPROM |
| STORAGE TEMP RANGE | -65.0 TO 150.0 CELSIUS DEGC |
| OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| SPECIAL FEATURES | ALTERED ITEM, MAKE FROM P/N 5962-8953702YX, DWG NAME MICROCIRCUITS, MEMORY, DIGITAL CMOS, 16K X 8 UV EPROM, MONOLITHIC SILICON; ENDURANCE 25 CYCLES/BYTE, MINIMUM |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM TOTAL SUPPLY AND 7.0 VOLTS MAXIMUM TOTAL SUPPLY |
No substitute or cross-reference records for this part.