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VA1106 — TRANSISTOR

✓ Government record, cited
— · SFP TRANSCEIVER
PRODUCT OVERVIEW

VA1106: TRANSISTOR.

The TRANSISTOR is a the manufacturer industrial component. Key specifications include overall_width: 1.050 INCHES MAXIMUM IN, overall_height: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM IN, overall_length: 1.573 INCHES MAXIMUM IN, mounting_method: UNTHREADED HOLE(S), features_provided: ELECTROSTATIC SENSITIVE, internal_configuration: FIELD EFFECT. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-274-8965, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS
VA1106
NSN: 5961-01-274-8965
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 17856 — SILICONIX INCORPORATED DIV SILICONIX (USA)
SPECIFICATIONS
overall_width1.050 INCHES MAXIMUM IN
overall_height0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM IN
overall_length1.573 INCHES MAXIMUM IN
mounting_methodUNTHREADED HOLE(S)
features_providedELECTROSTATIC SENSITIVE
internal_configurationFIELD EFFECT
semiconductor_materialSILICON
mounting_facility_quantity2
terminal_type_and_quantity2 PIN AND 1 CASE
power_rating_per_characteristic4.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
current_rating_per_characteristic2.00 AMPERES MAXIMUM DRAIN CURRENT
voltage_rating_in_volts_per_characteristic90.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 90.0 MAXIMUM DRAIN TO GATE VOLTAGE
NSN5961-01-274-8965
COMPONENT DIAGRAM
BAIL LATCH 10G SFP+ 850nm · SR (MMF, 300m) DOM: Digital Optical Monitoring TX RX LC DUPLEX 20-PIN EDGE CONNECTOR ~56.5 mm ~13.4mm SFP+ TRANSCEIVER | 10G | 850nm | SR (MMF, 300m) Hot-swappable | LC duplex fiber | DDM/DOM supported TITLE SFP+ XCVR PN VA1106 MFR OEM TRANSISTOR
KEY FEATURES
•
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 90.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 90.0 MAXIMUM DRAIN TO GATE VOLTAGE
•
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 CELSIUS AMBIENT AIR DEGC
•
MOUNTING FACILITY QUANTITY: 2
•
MOUNTING METHOD: UNTHREADED HOLE(S)
•
SEMICONDUCTOR MATERIAL: SILICON
•
INTERNAL CONFIGURATION: FIELD EFFECT
TECHNICAL CHARACTERISTICS
OVERALL HEIGHT0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM IN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC90.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 90.0 MAXIMUM DRAIN TO GATE VOLTAGE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT150.0 CELSIUS AMBIENT AIR DEGC
MOUNTING FACILITY QUANTITY2
MOUNTING METHODUNTHREADED HOLE(S)
SEMICONDUCTOR MATERIALSILICON
OVERALL LENGTH1.573 INCHES MAXIMUM IN
INTERNAL CONFIGURATIONFIELD EFFECT
OVERALL WIDTH1.050 INCHES MAXIMUM IN
FEATURES PROVIDEDELECTROSTATIC SENSITIVE
OTHER ITEMS IN FSC 5961 — Semiconductor Devices and Associated Hardware
Items in the same Federal Supply class. No interchangeability or substitution relationship is implied.
5961-00-000-0150 5961-00-000-4541 5961-00-000-5400 5961-00-000-7614 5961-00-000-8760 5961-00-001-1352 5961-00-001-2624 5961-00-001-2978
SUBSTITUTES & CROSS-REFERENCES

No substitute or cross-reference records for this part.

LIFECYCLE
NSN statusActive· U.S. Government catalog
Acquisition advice: Semi-active item — no replacement plannedNo demilitarization required
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FREQUENTLY ASKED QUESTIONS
What is VA1106?
VA1106 is a TRANSISTOR.
What is the NSN for VA1106?
VA1106 is cataloged in the U.S. Government catalog under NSN 5961-01-274-8965. This indicates validated use in U.S. government and defense supply chains.
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