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V42293-R13-K1 — MICROCIRCUIT,MEMORY

✓ Government record, cited
— · COMPONENT
PRODUCT OVERVIEW

V42293-R13-K1: MICROCIRCUIT,MEMORY.

The MICROCIRCUIT,MEMORY is a the manufacturer memory module engineered for enterprise server and workstation platforms requiring validated, high-reliability memory. Key specifications include features_provided: SYNCHRONOUS AND 3-STATE OUTPUT, output_logic_form: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC, inclosure_material: CERAMIC, memory_device_type: RAM, operating_temp_range: -40.0 TO 85.0 CELSIUS DEGC, inclosure_configuration: DUAL-IN-LINE. This part is cataloged in the U.S.

Government catalog under NSN 5962-01-362-1865, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS
V42293-R13-K1
NSN: 5962-01-362-1865
FSC: 5962 — Microcircuits, Electronic
CAGE: C0426 — HENSOLDT SENSORS GMBH (DEU)
SPECIFICATIONS
features_providedSYNCHRONOUS AND 3-STATE OUTPUT
output_logic_formCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
inclosure_materialCERAMIC
memory_device_typeRAM
operating_temp_range-40.0 TO 85.0 CELSIUS DEGC
inclosure_configurationDUAL-IN-LINE
terminal_type_and_quantity16 PIN
voltage_rating_and_type_per_characteristic5.0 VOLTS NOMINAL TOTAL
NSN5962-01-362-1865
COMPONENT DIAGRAM
COMPONENT MAIN IC EDGE CONNECTOR No detailed specs available MICROCIRCUIT,MEMORY TITLE COMPONENT PN V42293-R13-K1 MFR MICROCIRCUIT,MEMORY
KEY FEATURES
•
INCLOSURE MATERIAL: CERAMIC
•
FEATURES PROVIDED: SYNCHRONOUS AND 3-STATE OUTPUT
•
INCLOSURE CONFIGURATION: DUAL-IN-LINE
•
MEMORY DEVICE TYPE: RAM
•
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
•
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS NOMINAL TOTAL
•
OPERATING TEMP RANGE: -40.0 TO 85.0 CELSIUS DEGC
•
TERMINAL TYPE AND QUANTITY: 16 PIN
TYPICAL APPLICATIONS
  • Server memory expansion for virtualization workloads
  • Database performance optimization (in-memory computing)
  • VDI and remote desktop session hosting
  • High-performance computing (HPC) clusters
  • Mail server and collaboration platform scaling
  • Application server tier expansion
TECHNICAL CHARACTERISTICS
INCLOSURE MATERIALCERAMIC
FEATURES PROVIDEDSYNCHRONOUS AND 3-STATE OUTPUT
INCLOSURE CONFIGURATIONDUAL-IN-LINE
MEMORY DEVICE TYPERAM
OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
VOLTAGE RATING AND TYPE PER CHARACTERISTIC5.0 VOLTS NOMINAL TOTAL
OPERATING TEMP RANGE-40.0 TO 85.0 CELSIUS DEGC
TERMINAL TYPE AND QUANTITY16 PIN
OTHER ITEMS IN FSC 5962 — Microcircuits, Electronic
Items in the same Federal Supply class. No interchangeability or substitution relationship is implied.
5962-00-001-1861 5962-00-001-1901 5962-00-001-1902 5962-00-001-1905 5962-00-001-1906 5962-00-001-1907 5962-00-001-1908 5962-00-001-1909
SUBSTITUTES & CROSS-REFERENCES 2
IM65X081JEReference document
Same NSN cross-reference
Reference document — Secondary reference
HM1-6508-9Reference document
Same NSN cross-reference
Reference document — Design control — primary reference
LIFECYCLE
NSN statusActive· U.S. Government catalog
Demilitarization required — mutilation + specific procedure
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FREQUENTLY ASKED QUESTIONS
What is V42293-R13-K1?
V42293-R13-K1 is a MICROCIRCUIT,MEMORY.
What parts can replace V42293-R13-K1?
There are 2 known substitutes for V42293-R13-K1: IM65X081JE, HM1-6508-9. Substitute compatibility should be verified for your specific system.
What is the NSN for V42293-R13-K1?
V42293-R13-K1 is cataloged in the U.S. Government catalog under NSN 5962-01-362-1865. This indicates validated use in U.S. government and defense supply chains.
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