V11982 — TRANSISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

V11982: TRANSISTOR.

The TRANSISTOR is a the manufacturer industrial component. Key specifications include overall_length: 0.250 INCHES MINIMUM AND 0.350 INCHES MAXIMUM IN, mounting_method: UNTHREADED HOLE(S), terminal_length: 0.057 INCHES MINIMUM AND 0.063 INCHES MAXIMUM IN, overall_diameter: 0.875 INCHES MAXIMUM IN, internal_configuration: FIELD EFFECT, semiconductor_material: SILICON. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-369-7616, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

V11982

NSN: 5961-01-369-7616
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 01295 — TEXAS INSTRUMENTS INCORPORATED (USA)

SPECIFICATIONS

overall_length	0.250 INCHES MINIMUM AND 0.350 INCHES MAXIMUM IN
mounting_method	UNTHREADED HOLE(S)
terminal_length	0.057 INCHES MINIMUM AND 0.063 INCHES MAXIMUM IN
overall_diameter	0.875 INCHES MAXIMUM IN
internal_configuration	FIELD EFFECT
semiconductor_material	SILICON
mounting_facility_quantity	2
terminal_type_and_quantity	2 UNINSULATED WIRE LEAD
power_rating_per_characteristic	150.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
current_rating_per_characteristic	60.00 MILLIAMPERES NOMINAL DRAIN CURRENT
voltage_rating_in_volts_per_characteristic	60.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 60.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
maximum_operating_temp_per_measurement_point	150.0 CELSIUS JUNCTION DEGC
NSN	5961-01-369-7616

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 60.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 CELSIUS JUNCTION DEGC

•

MOUNTING FACILITY QUANTITY: 2

•

OVERALL DIAMETER: 0.875 INCHES MAXIMUM IN

•

TERMINAL LENGTH: 0.057 INCHES MINIMUM AND 0.063 INCHES MAXIMUM IN

•

MOUNTING METHOD: UNTHREADED HOLE(S)

•

SEMICONDUCTOR MATERIAL: SILICON

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	60.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 60.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	150.0 CELSIUS JUNCTION DEGC
MOUNTING FACILITY QUANTITY	2
OVERALL DIAMETER	0.875 INCHES MAXIMUM IN
TERMINAL LENGTH	0.057 INCHES MINIMUM AND 0.063 INCHES MAXIMUM IN
MOUNTING METHOD	UNTHREADED HOLE(S)
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	0.250 INCHES MINIMUM AND 0.350 INCHES MAXIMUM IN
INTERNAL CONFIGURATION	FIELD EFFECT
CURRENT RATING PER CHARACTERISTIC	60.00 MILLIAMPERES NOMINAL DRAIN CURRENT

OTHER ITEMS IN FSC 5961 — Semiconductor Devices and Associated Hardware

Items in the same Federal Supply class. No interchangeability or substitution relationship is implied.

5961-00-000-0150 5961-00-000-4541 5961-00-000-5400 5961-00-000-7614 5961-00-000-8760 5961-00-001-1352 5961-00-001-2624 5961-00-001-2978

SUBSTITUTES & CROSS-REFERENCES 1

1209303-201Reference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Normally procured from the manufacturer (OEM)No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is V11982?

V11982 is a TRANSISTOR.

What parts can replace V11982?

There is 1 known substitute for V11982: 1209303-201. Substitute compatibility should be verified for your specific system.

What is the NSN for V11982?

V11982 is cataloged in the U.S. Government catalog under NSN 5961-01-369-7616. This indicates validated use in U.S. government and defense supply chains.

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V11982 — TRANSISTOR

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