UTR1176 — SEMICONDUCTOR DEVICE,DIODE

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

UTR1176: SEMICONDUCTOR DEVICE,DIODE.

The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: SILICON SEMICONDUCTOR, overall_length: 0.710 INCHES MAXIMUM IN, mounting_method: THREADED STUD(S), features_provided: HERMETICALLY SEALED CASE AND MOUNTING HARDWARE, nominal_thread_size: 0.112 INCHES IN, thread_series_designator: UNIFIED NATIONAL COARSE (UNC). This part is cataloged in the U.S.

Government catalog under NSN 5961-00-421-2987, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

UTR1176

NSN: 5961-00-421-2987
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 12969 — MICRO USPD INC (USA)

SPECIFICATIONS

material	SILICON SEMICONDUCTOR
overall_length	0.710 INCHES MAXIMUM IN
mounting_method	THREADED STUD(S)
features_provided	HERMETICALLY SEALED CASE AND MOUNTING HARDWARE
nominal_thread_size	0.112 INCHES IN
thread_series_designator	UNIFIED NATIONAL COARSE (UNC)
mounting_facility_quantity	1
overall_width_across_flats	0.187 INCHES NOMINAL IN
terminal_type_and_quantity	1 TAB, SOLDER LUG AND 1 THREADED STUD
current_rating_per_characteristic	3.50 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 150.00 AMPERES MAXIMUM REVERSE CURRENT, DC
voltage_rating_in_volts_per_characteristic	100.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE AND 100.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
maximum_operating_temp_per_measurement_point	175.0 CELSIUS JUNCTION DEGC
NSN	5961-00-421-2987

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE AND 100.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 CELSIUS JUNCTION DEGC

•

MOUNTING FACILITY QUANTITY: 1

•

MOUNTING METHOD: THREADED STUD(S)

•

FEATURES PROVIDED: HERMETICALLY SEALED CASE AND MOUNTING HARDWARE

•

OVERALL WIDTH ACROSS FLATS: 0.187 INCHES NOMINAL IN

•

NOMINAL THREAD SIZE: 0.112 INCHES IN

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	100.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE AND 100.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	175.0 CELSIUS JUNCTION DEGC
MOUNTING FACILITY QUANTITY	1
MOUNTING METHOD	THREADED STUD(S)
OVERALL LENGTH	0.710 INCHES MAXIMUM IN
FEATURES PROVIDED	HERMETICALLY SEALED CASE AND MOUNTING HARDWARE
OVERALL WIDTH ACROSS FLATS	0.187 INCHES NOMINAL IN
NOMINAL THREAD SIZE	0.112 INCHES IN
CURRENT RATING PER CHARACTERISTIC	3.50 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 150.00 AMPERES MAXIMUM REVERSE CURRENT, DC
MATERIAL	SILICON SEMICONDUCTOR

SUBSTITUTES & CROSS-REFERENCES 1

22811Reference document

Same NSN cross-reference

Reference document — Design control — primary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Normally procured from the manufacturer (OEM)No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is UTR1176?

UTR1176 is a SEMICONDUCTOR DEVICE,DIODE.

What parts can replace UTR1176?

There is 1 known substitute for UTR1176: 22811. Substitute compatibility should be verified for your specific system.

What is the NSN for UTR1176?

UTR1176 is cataloged in the U.S. Government catalog under NSN 5961-00-421-2987. This indicates validated use in U.S. government and defense supply chains.

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UTR1176 — SEMICONDUCTOR DEVICE,DIODE

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