UTG8100 — SEMICONDUCTOR DEVICE,DIODE

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

UTG8100: SEMICONDUCTOR DEVICE,DIODE.

The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: SILICON SEMICONDUCTOR, overall_length: 1.438 INCHES MAXIMUM IN, mounting_method: THREADED STUD(S), nominal_thread_size: 0.250 INCHES IN, thread_series_designator: UNF, overall_width_across_flats: 0.677 INCHES NOMINAL IN. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-295-5480, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

UTG8100

NSN: 5961-01-295-5480
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 12969 — MICRO USPD INC (USA)

SPECIFICATIONS

material	SILICON SEMICONDUCTOR
overall_length	1.438 INCHES MAXIMUM IN
mounting_method	THREADED STUD(S)
nominal_thread_size	0.250 INCHES IN
thread_series_designator	UNF
mounting_facility_quantity	1
overall_width_across_flats	0.677 INCHES NOMINAL IN
terminal_type_and_quantity	1 THREADED STUD AND 1 UNTHREADED HOLE
specification/standard_data	53711-6128302 MANUFACTURERS SPECIFICATION CONTROL
current_rating_per_characteristic	50.00 AMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE
voltage_rating_in_volts_per_characteristic	400.0 MAXIMUM REVERSE VOLTAGE, DC AND 400.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
maximum_operating_temp_per_measurement_point	150.0 CELSIUS JUNCTION DEGC
NSN	5961-01-295-5480

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, DC AND 400.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 CELSIUS JUNCTION DEGC

•

MOUNTING FACILITY QUANTITY: 1

•

MOUNTING METHOD: THREADED STUD(S)

•

OVERALL WIDTH ACROSS FLATS: 0.677 INCHES NOMINAL IN

•

NOMINAL THREAD SIZE: 0.250 INCHES IN

•

CURRENT RATING PER CHARACTERISTIC: 50.00 AMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	400.0 MAXIMUM REVERSE VOLTAGE, DC AND 400.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	150.0 CELSIUS JUNCTION DEGC
MOUNTING FACILITY QUANTITY	1
MOUNTING METHOD	THREADED STUD(S)
OVERALL LENGTH	1.438 INCHES MAXIMUM IN
OVERALL WIDTH ACROSS FLATS	0.677 INCHES NOMINAL IN
NOMINAL THREAD SIZE	0.250 INCHES IN
CURRENT RATING PER CHARACTERISTIC	50.00 AMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE
SPECIFICATION/STANDARD DATA	53711-6128302 MANUFACTURERS SPECIFICATION CONTROL
MATERIAL	SILICON SEMICONDUCTOR

SUBSTITUTES & CROSS-REFERENCES 3

S5258Reference document

Same NSN cross-reference

Reference document — Secondary reference

6128302Reference document

Same NSN cross-reference

Reference document — Vendor item drawing reference

D8252Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Normally procured from the manufacturer (OEM)No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is UTG8100?

UTG8100 is a SEMICONDUCTOR DEVICE,DIODE.

What parts can replace UTG8100?

There are 3 known substitutes for UTG8100: S5258, 6128302, D8252. Substitute compatibility should be verified for your specific system.

What is the NSN for UTG8100?

UTG8100 is cataloged in the U.S. Government catalog under NSN 5961-01-295-5480. This indicates validated use in U.S. government and defense supply chains.

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UTG8100 — SEMICONDUCTOR DEVICE,DIODE

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