The TRANSISTOR is a the manufacturer industrial component. Key specifications include overall_width: 0.700 INCHES MAXIMUM IN, overall_height: 0.340 INCHES MAXIMUM IN, overall_length: 1.260 INCHES MAXIMUM IN, mounting_method: UNTHREADED HOLE(S), features_provided: HERMETICALLY SEALED CASE, internal_configuration: FIELD EFFECT. This product is currently in active production with full OEM support.
This part is cataloged in the Federal Logistics Information System (FLIS) under NSN 5961-01-294-1286, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| overall_width | 0.700 INCHES MAXIMUM IN |
| overall_height | 0.340 INCHES MAXIMUM IN |
| overall_length | 1.260 INCHES MAXIMUM IN |
| mounting_method | UNTHREADED HOLE(S) |
| features_provided | HERMETICALLY SEALED CASE |
| internal_configuration | FIELD EFFECT |
| semiconductor_material | SILICON |
| mounting_facility_quantity | 2 |
| terminal_type_and_quantity | 2 PIN AND 1 CASE |
| power_rating_per_characteristic | 70.0 WATTS MAXIMUM TOTAL POWER DISSIPATION |
| current_rating_per_characteristic | 6.00 AMPERES MAXIMUM DRAIN CURRENT |
| voltage_rating_in_volts_per_characteristic | 500.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 500.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE |
| NSN | 5961-01-294-1286 |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-66 |
| POWER RATING PER CHARACTERISTIC | 70.0 WATTS MAXIMUM TOTAL POWER DISSIPATION |
| MOUNTING METHOD | UNTHREADED HOLE(S) |
| OVERALL HEIGHT | 0.340 INCHES MAXIMUM IN |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| OVERALL WIDTH | 0.700 INCHES MAXIMUM IN |
| TERMINAL TYPE AND QUANTITY | 2 PIN AND 1 CASE |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 CELSIUS AMBIENT AIR DEGC |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 500.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 500.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE |
| SEMICONDUCTOR MATERIAL | SILICON |