UNF120: TRANSISTOR.
The TRANSISTOR is a the manufacturer industrial component. Key specifications include overall_width: 0.990 INCHES MINIMUM AND 1.050 INCHES MAXIMUM IN, overall_height: 0.250 INCHES MINIMUM AND 0.328 INCHES MAXIMUM IN, overall_length: 1.573 INCHES MAXIMUM IN, mounting_method: UNTHREADED HOLE(S), terminal_length: 0.500 INCHES MINIMUM IN, overall_diameter: 0.370 INCHES MAXIMUM IN. This part is cataloged in the U.S.
Government catalog under NSN 5961-01-200-7952, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| overall_width | 0.990 INCHES MINIMUM AND 1.050 INCHES MAXIMUM IN |
| overall_height | 0.250 INCHES MINIMUM AND 0.328 INCHES MAXIMUM IN |
| overall_length | 1.573 INCHES MAXIMUM IN |
| mounting_method | UNTHREADED HOLE(S) |
| terminal_length | 0.500 INCHES MINIMUM IN |
| overall_diameter | 0.370 INCHES MAXIMUM IN |
| special_features | FIELD FORCE EFFECT TYPE: ELECTROSTATIC CHARGE |
| features_provided | HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE |
| internal_configuration | FIELD EFFECT |
| semiconductor_material | SILICON |
| end_item_identification | INDICATOR GROUP AN/SPA-25G G |
| terminal_circle_diameter | 0.210 INCHES MAXIMUM IN |
| NSN | 5961-01-200-7952 |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 100.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 100.0 MAXIMUM DRAIN TO SOURCE VOLTAGE |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 CELSIUS AMBIENT AIR DEGC |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-39 |
| OVERALL DIAMETER | 0.370 INCHES MAXIMUM IN |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM IN |
| MOUNTING METHOD | TERMINAL |
| SEMICONDUCTOR MATERIAL | SILICON |
| OVERALL LENGTH | 0.260 INCHES MAXIMUM IN |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TX |