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UM6601B — SEMICONDUCTOR DEVICE,DIODE

✓ Government record, cited
— · SFP TRANSCEIVER
PRODUCT OVERVIEW

UM6601B: SEMICONDUCTOR DEVICE,DIODE.

The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: SILICON SEMICONDUCTOR, overall_length: 0.250 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 0.975 INCHES MINIMUM IN, overall_diameter: 0.075 INCHES MAXIMUM IN, features_provided: HERMETICALLY SEALED CASE. This part is cataloged in the U.S.

Government catalog under NSN 5961-00-365-8382, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS
UM6601B
NSN: 5961-00-365-8382
NIINs: 003658382, 010044009, 010904934
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 12969 — MICRO USPD INC (USA)
SPECIFICATIONS
materialSILICON SEMICONDUCTOR
overall_length0.250 INCHES MAXIMUM IN
mounting_methodTERMINAL
terminal_length0.975 INCHES MINIMUM IN
overall_diameter0.075 INCHES MAXIMUM IN
features_providedHERMETICALLY SEALED CASE
terminal_circle_diameter0.019 INCHES MINIMUM AND 0.021 INCHES MAXIMUM IN
terminal_type_and_quantity2 UNINSULATED WIRE LEAD
power_rating_per_characteristic2.5 WATTS MAXIMUM AVERAGE ON-STATE POWER DISSIPATION
current_rating_per_characteristic10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
voltage_rating_in_volts_per_characteristic100.0 MINIMUM BREAKDOWN VOLTAGE, DC
maximum_operating_temp_per_measurement_point175.0 CELSIUS AMBIENT AIR DEGC
NSN5961-00-365-8382
COMPONENT DIAGRAM
BAIL LATCH 10G SFP+ 850nm · SR (MMF, 300m) DOM: Digital Optical Monitoring TX RX LC DUPLEX 20-PIN EDGE CONNECTOR ~56.5 mm ~13.4mm SFP+ TRANSCEIVER | 10G | 850nm | SR (MMF, 300m) Hot-swappable | LC duplex fiber | DDM/DOM supported TITLE SFP+ XCVR PN UM6601B MFR OEM SEMICONDUCTOR DEVICE,DIODE
KEY FEATURES
•
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK
•
OVERALL DIAMETER: 0.070 INCHES MAXIMUM IN
•
TERMINAL LENGTH: 0.975 INCHES MINIMUM IN
•
MOUNTING METHOD: TERMINAL
•
FEATURES PROVIDED: HERMETICALLY SEALED CASE
•
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
•
MATERIAL: SILICON SEMICONDUCTOR
TECHNICAL CHARACTERISTICS
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC100.0 MAXIMUM REVERSE VOLTAGE, PEAK
OVERALL DIAMETER0.070 INCHES MAXIMUM IN
TERMINAL LENGTH0.975 INCHES MINIMUM IN
MOUNTING METHODTERMINAL
OVERALL LENGTH0.155 INCHES MAXIMUM IN
FEATURES PROVIDEDHERMETICALLY SEALED CASE
CURRENT RATING PER CHARACTERISTIC100.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
MATERIALSILICON SEMICONDUCTOR
MATERIALGLASS ENCLOSURE
TERMINAL TYPE AND QUANTITY2 UNINSULATED WIRE LEAD
SUBSTITUTES & CROSS-REFERENCES 1
246235-0001Same NSN cross-reference
Same NSN cross-reference
Also cataloged under this NSN
LIFECYCLE
NSN statusActive· U.S. Government catalog
Acquisition advice: Normally procured from the manufacturer (OEM)No demilitarization required
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FREQUENTLY ASKED QUESTIONS
What is UM6601B?
UM6601B is a SEMICONDUCTOR DEVICE,DIODE.
What parts can replace UM6601B?
There is 1 known substitute for UM6601B: 246235-0001. Substitute compatibility should be verified for your specific system.
What is the NSN for UM6601B?
UM6601B is cataloged in the U.S. Government catalog under NSN 5961-00-365-8382. This indicates validated use in U.S. government and defense supply chains.
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