UES706HR2 — SEMICONDUCTOR DEVICE,DIODE

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

UES706HR2: SEMICONDUCTOR DEVICE,DIODE.

The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: SILICON SEMICONDUCTOR, overall_length: 31.42 MILLIMETERS MAXIMUM MM, mounting_method: THREADED STUD(S), overall_diameter: 10.92 MILLIMETERS MAXIMUM MM, terminal_type_and_quantity: 1 TAB, SOLDER LUG AND 1 THREADED STUD, current_rating_per_characteristic: 20.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-462-8647, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

UES706HR2

NSN: 5961-01-462-8647
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 12969 — MICRO USPD INC (USA)

SPECIFICATIONS

material	SILICON SEMICONDUCTOR
overall_length	31.42 MILLIMETERS MAXIMUM MM
mounting_method	THREADED STUD(S)
overall_diameter	10.92 MILLIMETERS MAXIMUM MM
mounting_facility_quantity	1
terminal_type_and_quantity	1 TAB, SOLDER LUG AND 1 THREADED STUD
current_rating_per_characteristic	20.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
voltage_rating_in_volts_per_characteristic	400.0 NOMINAL REVERSE VOLTAGE, PEAK
maximum_operating_temp_per_measurement_point	150.0 CELSIUS AMBIENT AIR DEGC
electrode_internally-electrically_connected_to_case	CATHODE
joint_electronic_device_engineering_council/jedec/case_outline_designation	DO-4
NSN	5961-01-462-8647

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 NOMINAL REVERSE VOLTAGE, PEAK

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 CELSIUS AMBIENT AIR DEGC

•

MOUNTING FACILITY QUANTITY: 1

•

JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-4

•

OVERALL DIAMETER: 10.92 MILLIMETERS MAXIMUM MM

•

MOUNTING METHOD: THREADED STUD(S)

•

CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	400.0 NOMINAL REVERSE VOLTAGE, PEAK
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	150.0 CELSIUS AMBIENT AIR DEGC
MOUNTING FACILITY QUANTITY	1
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION	DO-4
OVERALL DIAMETER	10.92 MILLIMETERS MAXIMUM MM
MOUNTING METHOD	THREADED STUD(S)
OVERALL LENGTH	31.42 MILLIMETERS MAXIMUM MM
CURRENT RATING PER CHARACTERISTIC	20.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
MATERIAL	SILICON SEMICONDUCTOR
TERMINAL TYPE AND QUANTITY	1 TAB, SOLDER LUG AND 1 THREADED STUD

OTHER ITEMS IN FSC 5961 — Semiconductor Devices and Associated Hardware

Items in the same Federal Supply class. No interchangeability or substitution relationship is implied.

5961-00-000-0150 5961-00-000-4541 5961-00-000-5400 5961-00-000-7614 5961-00-000-8760 5961-00-001-1352 5961-00-001-2624 5961-00-001-2978

SUBSTITUTES & CROSS-REFERENCES

No substitute or cross-reference records for this part.

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Normally procured from the manufacturer (OEM)No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is UES706HR2?

UES706HR2 is a SEMICONDUCTOR DEVICE,DIODE.

What is the NSN for UES706HR2?

UES706HR2 is cataloged in the U.S. Government catalog under NSN 5961-01-462-8647. This indicates validated use in U.S. government and defense supply chains.

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UES706HR2 — SEMICONDUCTOR DEVICE,DIODE

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