UES706: SEMICONDUCTOR DEVICE,DIODE.
The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: SILICON SEMICONDUCTOR, overall_length: 1.252 INCHES MAXIMUM IN, mounting_method: THREADED STUD(S), terminal_length: 0.357 INCHES NOMINAL IN, special_features: ITEM MUST COMPLY WITH REQUIREMENTS OF DEFENSE SUPPLY CENTER COLUMBUS PRODUCTION STANDARD NO. LO4005, features_provided: HERMETICALLY SEALED CASE.
This part is cataloged in the U.S. Government catalog under NSN 5961-01-167-4276, indicating validated use in U.S. government and defense logistics supply chains.
Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels. Verify compatibility with your specific system configuration before ordering.
| material | SILICON SEMICONDUCTOR |
| overall_length | 1.252 INCHES MAXIMUM IN |
| mounting_method | THREADED STUD(S) |
| terminal_length | 0.357 INCHES NOMINAL IN |
| special_features | ITEM MUST COMPLY WITH REQUIREMENTS OF DEFENSE SUPPLY CENTER COLUMBUS PRODUCTION STANDARD NO. LO4005 |
| features_provided | HERMETICALLY SEALED CASE |
| nominal_thread_size | 0.190 INCHES IN |
| end_item_identification | RADAR SYSTEM AN/FPS-117 |
| thread_series_designator | UNF |
| mounting_facility_quantity | 1 |
| overall_width_across_flats | 0.440 INCHES MAXIMUM IN |
| terminal_type_and_quantity | 1 TAB, SOLDER LUG AND 1 THREADED STUD |
| NSN | 5961-01-167-4276 |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 400.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE |
| MOUNTING FACILITY QUANTITY | 1 |
| TERMINAL LENGTH | 0.357 INCHES NOMINAL IN |
| MOUNTING METHOD | THREADED STUD(S) |
| OVERALL LENGTH | 1.453 INCHES MAXIMUM IN |
| OVERALL WIDTH ACROSS FLATS | 0.677 INCHES NOMINAL IN |
| NOMINAL THREAD SIZE | 0.190 INCHES IN |
| CURRENT RATING PER CHARACTERISTIC | 300.00 AMPERES NOMINAL PEAK FORWARD SURGE CURRENT |
| MATERIAL | SILICON SEMICONDUCTOR |
| TERMINAL TYPE AND QUANTITY | 1 TAB, SOLDER LUG AND 1 THREADED STUD |