UES2604R: SEMICONDUCTOR DEVICES,UNITIZED.
The SEMICONDUCTOR DEVICES,UNITIZED is a the manufacturer industrial component. Key specifications include overall_width: 1.050 INCHES MAXIMUM IN, overall_height: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM IN, overall_length: 1.580 INCHES MAXIMUM IN, mounting_method: UNTHREADED HOLE(S), features_provided: BURN IN AND ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE AND REVERSE POLARITY, semiconductor_material: SILICON ALL SEMICONDUCTOR DEVICE DIODE. This part is cataloged in the U.S.
Government catalog under NSN 5961-01-324-5100, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| overall_width | 1.050 INCHES MAXIMUM IN |
| overall_height | 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM IN |
| overall_length | 1.580 INCHES MAXIMUM IN |
| mounting_method | UNTHREADED HOLE(S) |
| features_provided | BURN IN AND ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE AND REVERSE POLARITY |
| semiconductor_material | SILICON ALL SEMICONDUCTOR DEVICE DIODE |
| end_item_identification | 5805-01-188-3993 CENTRAL OFFICE,TELEPHONE,AUTOMATIC |
| mounting_facility_quantity | 2 |
| terminal_type_and_quantity | 2 PIN AND 1 CASE |
| component_name_and_quantity | 2 SEMICONDUCTOR DEVICE DIODE |
| current_rating_per_characteristic | 30.00 AMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE AND 300.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT ALL SEMICONDUCTOR DEVICE DIODE |
| voltage_rating_in_volts_per_characteristic | 200.0 MAXIMUM REVERSE VOLTAGE, PEAK ALL SEMICONDUCTOR DEVICE DIODE |
| NSN | 5961-01-324-5100 |
| OVERALL HEIGHT | 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM IN |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 200.0 MAXIMUM REVERSE VOLTAGE, PEAK ALL SEMICONDUCTOR DEVICE DIODE |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 CELSIUS JUNCTION DEGC |
| MOUNTING FACILITY QUANTITY | 2 |
| MOUNTING METHOD | UNTHREADED HOLE(S) |
| SEMICONDUCTOR MATERIAL | SILICON ALL SEMICONDUCTOR DEVICE DIODE |
| OVERALL LENGTH | 1.580 INCHES MAXIMUM IN |
| COMPONENT NAME AND QUANTITY | 2 SEMICONDUCTOR DEVICE DIODE |
| OVERALL WIDTH | 1.050 INCHES MAXIMUM IN |
| FEATURES PROVIDED | BURN IN AND ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE AND REVERSE POLARITY |
No substitute or cross-reference records for this part.