UES2602HR — SEMICONDUCTOR DEVICES,UNITIZED

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

UES2602HR: SEMICONDUCTOR DEVICES,UNITIZED.

The SEMICONDUCTOR DEVICES,UNITIZED is a the manufacturer industrial component. Key specifications include overall_width: 1.050 INCHES MAXIMUM IN, overall_height: 0.312 INCHES MINIMUM IN, overall_length: 1.573 INCHES MAXIMUM IN, mounting_method: UNTHREADED HOLE(S), special_features: ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN, features_provided: REVERSE POLARITY. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-276-8945, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

UES2602HR

NSN: 5961-01-276-8945
NIINs: 012768945, 013379214
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 12969 — MICRO USPD INC (USA)

SPECIFICATIONS

overall_width	1.050 INCHES MAXIMUM IN
overall_height	0.312 INCHES MINIMUM IN
overall_length	1.573 INCHES MAXIMUM IN
mounting_method	UNTHREADED HOLE(S)
special_features	ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN
features_provided	REVERSE POLARITY
semiconductor_material	SILICON ALL SEMICONDUCTOR DEVICE DIODE
end_item_identification	TACTICAL AIR OPERATIONS MODULE AN/TYQ-23(V)1
mounting_facility_quantity	2
terminal_type_and_quantity	2 PIN AND 1 CASE
component_name_and_quantity	2 SEMICONDUCTOR DEVICE DIODE
function_for_which_designed	RECTIFIER
NSN	5961-01-276-8945

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK ALL SEMICONDUCTOR DEVICE DIODE

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 CELSIUS AMBIENT AIR DEGC

•

MOUNTING FACILITY QUANTITY: 2

•

JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-204AA

•

MOUNTING METHOD: UNTHREADED HOLE(S)

•

SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE

TECHNICAL CHARACTERISTICS

OVERALL HEIGHT	0.450 INCHES MAXIMUM IN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	100.0 MAXIMUM REVERSE VOLTAGE, PEAK ALL SEMICONDUCTOR DEVICE DIODE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	175.0 CELSIUS AMBIENT AIR DEGC
MOUNTING FACILITY QUANTITY	2
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION	TO-204AA
MOUNTING METHOD	UNTHREADED HOLE(S)
SEMICONDUCTOR MATERIAL	SILICON ALL SEMICONDUCTOR DEVICE DIODE
OVERALL LENGTH	1.573 INCHES MAXIMUM IN
COMPONENT NAME AND QUANTITY	2 SEMICONDUCTOR DEVICE DIODE
OVERALL WIDTH	1.050 INCHES MAXIMUM IN

SUBSTITUTES & CROSS-REFERENCES 1

0N370524-1Reference document

Same NSN cross-reference

Reference document — Vendor item drawing reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Normally procured from the manufacturer (OEM)No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is UES2602HR?

UES2602HR is a SEMICONDUCTOR DEVICES,UNITIZED.

What parts can replace UES2602HR?

There is 1 known substitute for UES2602HR: 0N370524-1. Substitute compatibility should be verified for your specific system.

What is the NSN for UES2602HR?

UES2602HR is cataloged in the U.S. Government catalog under NSN 5961-01-276-8945. This indicates validated use in U.S. government and defense supply chains.

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UES2602HR — SEMICONDUCTOR DEVICES,UNITIZED

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