UES1102 — SEMICONDUCTOR DEVICE,DIODE

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

UES1102: SEMICONDUCTOR DEVICE,DIODE.

The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: SILICON SEMICONDUCTOR, overall_length: 0.250 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 0.700 INCHES MINIMUM IN, overall_diameter: 0.085 INCHES MAXIMUM IN, features_provided: HERMETICALLY SEALED CASE. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-132-0037, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

UES1102

NSN: 5961-01-132-0037
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 12969 — MICRO USPD INC (USA)

SPECIFICATIONS

material	SILICON SEMICONDUCTOR
overall_length	0.250 INCHES MAXIMUM IN
mounting_method	TERMINAL
terminal_length	0.700 INCHES MINIMUM IN
overall_diameter	0.085 INCHES MAXIMUM IN
features_provided	HERMETICALLY SEALED CASE
end_item_identification	AN/FSQ-114 11982
terminal_type_and_quantity	2 UNINSULATED WIRE LEAD
current_rating_per_characteristic	2.50 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
voltage_rating_in_volts_per_characteristic	100.0 MAXIMUM REVERSE VOLTAGE, PEAK
maximum_operating_temp_per_measurement_point	175.0 CELSIUS AMBIENT AIR DEGC
NSN	5961-01-132-0037

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 CELSIUS AMBIENT AIR DEGC

•

OVERALL DIAMETER: 0.085 INCHES MAXIMUM IN

•

TERMINAL LENGTH: 0.700 INCHES MINIMUM IN

•

MOUNTING METHOD: TERMINAL

•

FEATURES PROVIDED: HERMETICALLY SEALED CASE

•

CURRENT RATING PER CHARACTERISTIC: 2.50 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	100.0 MAXIMUM REVERSE VOLTAGE, PEAK
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	175.0 CELSIUS AMBIENT AIR DEGC
OVERALL DIAMETER	0.085 INCHES MAXIMUM IN
TERMINAL LENGTH	0.700 INCHES MINIMUM IN
MOUNTING METHOD	TERMINAL
OVERALL LENGTH	0.250 INCHES MAXIMUM IN
FEATURES PROVIDED	HERMETICALLY SEALED CASE
CURRENT RATING PER CHARACTERISTIC	2.50 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
END ITEM IDENTIFICATION	AN/FSQ-114 11982
MATERIAL	SILICON SEMICONDUCTOR

SUBSTITUTES & CROSS-REFERENCES 2

BYV27.150Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

Q68000-A4679-F25Reference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Normally procured from the manufacturer (OEM)No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is UES1102?

UES1102 is a SEMICONDUCTOR DEVICE,DIODE.

What parts can replace UES1102?

There are 2 known substitutes for UES1102: BYV27.150, Q68000-A4679-F25. Substitute compatibility should be verified for your specific system.

What is the NSN for UES1102?

UES1102 is cataloged in the U.S. Government catalog under NSN 5961-01-132-0037. This indicates validated use in U.S. government and defense supply chains.

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UES1102 — SEMICONDUCTOR DEVICE,DIODE

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