TXV-3001: SEMICONDUCTOR DEVICE,DIODE.
The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: GLASS ENCLOSURE, overall_length: 0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 1.000 INCHES MINIMUM IN, overall_diameter: 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM IN, terminal_type_and_quantity: 2 UNINSULATED WIRE LEAD. This part is cataloged in the U.S.
Government catalog under NSN 5961-01-290-3852, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| material | GLASS ENCLOSURE |
| overall_length | 0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM IN |
| mounting_method | TERMINAL |
| terminal_length | 1.000 INCHES MINIMUM IN |
| overall_diameter | 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM IN |
| terminal_type_and_quantity | 2 UNINSULATED WIRE LEAD |
| function_for_which_designed | SWITCHING |
| power_rating_per_characteristic | 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
| capacitance_rating_in_picofarads | 0.25 MAXIMUM |
| current_rating_per_characteristic | 100.00 NANOAMPERES MAXIMUM REVERSE CURRENT, INSTANTANEOUS |
| voltage_rating_in_volts_per_characteristic | 200.0 MINIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS AND 1.0 MAXIMUM FORWARD VOLTAGE, DC |
| maximum_operating_temp_per_measurement_point | 150.0 CELSIUS JUNCTION DEGC |
| NSN | 5961-01-290-3852 |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 200.0 MINIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS AND 1.0 MAXIMUM FORWARD VOLTAGE, DC |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 CELSIUS JUNCTION DEGC |
| OVERALL DIAMETER | 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM IN |
| TERMINAL LENGTH | 1.000 INCHES MINIMUM IN |
| MOUNTING METHOD | TERMINAL |
| OVERALL LENGTH | 0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM IN |
| CAPACITANCE RATING IN PICOFARADS | 0.25 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | 100.00 NANOAMPERES MAXIMUM REVERSE CURRENT, INSTANTANEOUS |
| FUNCTION FOR WHICH DESIGNED | SWITCHING |
| MATERIAL | SILICON SEMICONDUCTOR |
No substitute or cross-reference records for this part.