TS-1242-2 — SEMICONDUCTOR DEVICES,UNITIZED

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

TS-1242-2: SEMICONDUCTOR DEVICES,UNITIZED.

The SEMICONDUCTOR DEVICES,UNITIZED is a the manufacturer industrial component. Key specifications include material: CERAMIC OR PLASTIC ENCLOSURE, overall_width: 0.290 INCHES MINIMUM AND 0.320 INCHES MAXIMUM IN, overall_height: 0.400 INCHES MAXIMUM IN, overall_length: 0.786 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 0.150 INCHES MINIMUM IN. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-336-7779, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

TS-1242-2

NSN: 5961-01-336-7779
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 54485 — MICROSEMI CORP.- MASSACHUSETTS DBA MICROSEMI LAWRENCE (USA)

SPECIFICATIONS

material	CERAMIC OR PLASTIC ENCLOSURE
overall_width	0.290 INCHES MINIMUM AND 0.320 INCHES MAXIMUM IN
overall_height	0.400 INCHES MAXIMUM IN
overall_length	0.786 INCHES MAXIMUM IN
mounting_method	TERMINAL
terminal_length	0.150 INCHES MINIMUM IN
special_features	ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: PNP
features_provided	BURN IN AND ELECTROSTATIC SENSITIVE
semiconductor_material	SILICON ALL TRANSISTOR
end_item_identification	5841-01-236-8951 DETECTING SET,RADAR SIGNALS
component_name_and_quantity	6 TRANSISTOR
power_rating_per_characteristic	360.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
NSN	5961-01-336-7779

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN ALL TRANSISTOR

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 CELSIUS JUNCTION DEGC

•

TERMINAL LENGTH: 0.150 INCHES MINIMUM IN

•

MOUNTING METHOD: TERMINAL

•

SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR

•

COMPONENT NAME AND QUANTITY: 6 TRANSISTOR

TECHNICAL CHARACTERISTICS

OVERALL HEIGHT	0.400 INCHES MAXIMUM IN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN ALL TRANSISTOR
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	200.0 CELSIUS JUNCTION DEGC
TERMINAL LENGTH	0.150 INCHES MINIMUM IN
MOUNTING METHOD	TERMINAL
SEMICONDUCTOR MATERIAL	SILICON ALL TRANSISTOR
OVERALL LENGTH	0.786 INCHES MAXIMUM IN
COMPONENT NAME AND QUANTITY	6 TRANSISTOR
OVERALL WIDTH	0.290 INCHES MINIMUM AND 0.320 INCHES MAXIMUM IN
FEATURES PROVIDED	BURN IN AND ELECTROSTATIC SENSITIVE

SUBSTITUTES & CROSS-REFERENCES 6

A3084174Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

HEX2N3799/883BReference document

Same NSN cross-reference