TODV 640 — SEMICONDUCTOR DEVICE,THYRISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

TODV 640: SEMICONDUCTOR DEVICE,THYRISTOR.

The SEMICONDUCTOR DEVICE,THYRISTOR is a the manufacturer industrial component. Key specifications include overall_width: 0.875 INCHES NOMINAL IN, overall_height: 1.197 INCHES NOMINAL IN, overall_length: 1.687 INCHES NOMINAL IN, mounting_method: UNTHREADED HOLE(S), terminal_length: 0.312 INCHES NOMINAL IN, semiconductor_material: SILICON. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-364-1983, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

TODV 640

NSN: 5961-01-364-1983
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 50088 — STMICROELECTRONICS INC (USA)

SPECIFICATIONS

overall_width	0.875 INCHES NOMINAL IN
overall_height	1.197 INCHES NOMINAL IN
overall_length	1.687 INCHES NOMINAL IN
mounting_method	UNTHREADED HOLE(S)
terminal_length	0.312 INCHES NOMINAL IN
semiconductor_material	SILICON
end_item_identification	6625-01-249-3366
mounting_facility_quantity	2
terminal_type_and_quantity	3 TAB, SOLDER LUG
power_rating_per_characteristic	40.0 WATTS NOMINAL PEAK GATE POWER DISSIPATION AND 1.0 WATTS NOMINAL AVERAGE GATE POWER DISSIPATION
current_rating_per_characteristic	40.00 AMPERES NOMINAL ON-STATE CURRENT, RMS TOTAL AND 370.00 AMPERES NOMINAL PEAK ON-STATE SURGE CURRENT
voltage_rating_in_volts_per_characteristic	600.0 NOMINAL REPETITIVE PEAK OFF-STATE VOLTAGE
NSN	5961-01-364-1983

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 NOMINAL REPETITIVE PEAK OFF-STATE VOLTAGE

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 CELSIUS AMBIENT AIR DEGC

•

MOUNTING FACILITY QUANTITY: 2

•

TERMINAL LENGTH: 0.312 INCHES NOMINAL IN

•

MOUNTING METHOD: UNTHREADED HOLE(S)

•

SEMICONDUCTOR MATERIAL: SILICON

TECHNICAL CHARACTERISTICS

OVERALL HEIGHT	1.197 INCHES NOMINAL IN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	600.0 NOMINAL REPETITIVE PEAK OFF-STATE VOLTAGE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	125.0 CELSIUS AMBIENT AIR DEGC
MOUNTING FACILITY QUANTITY	2
TERMINAL LENGTH	0.312 INCHES NOMINAL IN
MOUNTING METHOD	UNTHREADED HOLE(S)
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	1.687 INCHES NOMINAL IN
OVERALL WIDTH	0.875 INCHES NOMINAL IN
CURRENT RATING PER CHARACTERISTIC	40.00 AMPERES NOMINAL ON-STATE CURRENT, RMS TOTAL AND 370.00 AMPERES NOMINAL PEAK ON-STATE SURGE CURRENT

OTHER ITEMS IN FSC 5961 — Semiconductor Devices and Associated Hardware

Items in the same Federal Supply class. No interchangeability or substitution relationship is implied.

5961-00-000-0150 5961-00-000-4541 5961-00-000-5400 5961-00-000-7614 5961-00-000-8760 5961-00-001-1352 5961-00-001-2624 5961-00-001-2978

SUBSTITUTES & CROSS-REFERENCES 1

1884-0334Reference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Normally procured from the manufacturer (OEM)No demilitarization required

Ready to buy TODV 640?

Compare prices from verified sellers on eBay

Buy on eBay →

As an eBay Partner, PartsTable may earn a commission. Your price is not affected.

FREQUENTLY ASKED QUESTIONS

What is TODV 640?

TODV 640 is a SEMICONDUCTOR DEVICE,THYRISTOR.

What parts can replace TODV 640?

There is 1 known substitute for TODV 640: 1884-0334. Substitute compatibility should be verified for your specific system.

What is the NSN for TODV 640?

TODV 640 is cataloged in the U.S. Government catalog under NSN 5961-01-364-1983. This indicates validated use in U.S. government and defense supply chains.

Community Feedback

TODV 640 — SEMICONDUCTOR DEVICE,THYRISTOR

Request a Quote — TODV 640