TIS58Y — TRANSISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

TIS58Y: TRANSISTOR.

The TRANSISTOR is a the manufacturer industrial component. Key specifications include overall_width: 0.175 INCHES MINIMUM AND 0.205 INCHES MAXIMUM IN, overall_height: 0.125 INCHES MINIMUM AND 0.165 INCHES MAXIMUM IN, overall_length: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM IN, features_provided: HERMETICALLY SEALED CASE, internal_configuration: FIELD EFFECT, semiconductor_material: SILICON. This part is cataloged in the U.S.

Government catalog under NSN 5961-00-615-8207, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

TIS58Y

NSN: 5961-00-615-8207
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 01295 — TEXAS INSTRUMENTS INCORPORATED (USA)

SPECIFICATIONS

overall_width	0.175 INCHES MINIMUM AND 0.205 INCHES MAXIMUM IN
overall_height	0.125 INCHES MINIMUM AND 0.165 INCHES MAXIMUM IN
overall_length	0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM IN
features_provided	HERMETICALLY SEALED CASE
internal_configuration	FIELD EFFECT
semiconductor_material	SILICON
terminal_type_and_quantity	3 UNINSULATED WIRE LEAD
power_rating_per_characteristic	360.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
current_rating_per_characteristic	4.00 MILLIAMPERES MAXIMUM REVERSE GATE CURRENT WITH ALL OTHER TERMINALS SHORT-CIRCUIT TO SOURCE, JUNCTION-GATE
NSN	5961-00-615-8207

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 25.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 15.0 MAXIMUM DRAIN TO SOURCE VOLTAGE

•

SEMICONDUCTOR MATERIAL: SILICON

•

INTERNAL CONFIGURATION: FIELD EFFECT

•

FEATURES PROVIDED: HERMETICALLY SEALED CASE

•

CURRENT RATING PER CHARACTERISTIC: 4.00 MILLIAMPERES MAXIMUM REVERSE GATE CURRENT WITH ALL OTHER TERMINALS SHORT-CIRCUIT TO SOURCE, JUNCTION-GATE

TECHNICAL CHARACTERISTICS

OVERALL HEIGHT	0.125 INCHES MINIMUM AND 0.165 INCHES MAXIMUM IN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	25.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 25.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 15.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM IN
INTERNAL CONFIGURATION	FIELD EFFECT
OVERALL WIDTH	0.175 INCHES MINIMUM AND 0.205 INCHES MAXIMUM IN
FEATURES PROVIDED	HERMETICALLY SEALED CASE
CURRENT RATING PER CHARACTERISTIC	4.00 MILLIAMPERES MAXIMUM REVERSE GATE CURRENT WITH ALL OTHER TERMINALS SHORT-CIRCUIT TO SOURCE, JUNCTION-GATE
TERMINAL TYPE AND QUANTITY	3 UNINSULATED WIRE LEAD
POWER RATING PER CHARACTERISTIC	360.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION

SUBSTITUTES & CROSS-REFERENCES 2

DMS 81037BReference document

Same NSN cross-reference

Reference document — Secondary reference

528038Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Terminal item — no further procurement; issued until stock is exhaustedNo demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is TIS58Y?

TIS58Y is a TRANSISTOR.

What parts can replace TIS58Y?

There are 2 known substitutes for TIS58Y: DMS 81037B, 528038. Substitute compatibility should be verified for your specific system.

What is the NSN for TIS58Y?

TIS58Y is cataloged in the U.S. Government catalog under NSN 5961-00-615-8207. This indicates validated use in U.S. government and defense supply chains.

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