TIC225M: SEMICONDUCTOR DEVICE,THYRISTOR.
The SEMICONDUCTOR DEVICE,THYRISTOR is a the manufacturer industrial component. Key specifications include material: PLASTIC ENCLOSURE, overall_width: 0.400 INCHES NOMINAL IN, overall_height: 0.165 INCHES NOMINAL IN, overall_length: 1.145 INCHES NOMINAL IN, semiconductor_material: SILICON, terminal_type_and_quantity: 3 PIN. This part is cataloged in the U.S.
Government catalog under NSN 5961-01-325-4713, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| material | PLASTIC ENCLOSURE |
| overall_width | 0.400 INCHES NOMINAL IN |
| overall_height | 0.165 INCHES NOMINAL IN |
| overall_length | 1.145 INCHES NOMINAL IN |
| semiconductor_material | SILICON |
| terminal_type_and_quantity | 3 PIN |
| power_rating_per_characteristic | 2.2 WATTS MAXIMUM PEAK GATE POWER DISSIPATION |
| current_rating_per_characteristic | 80.00 AMPERES MAXIMUM PEAK ON-STATE SURGE CURRENT |
| voltage_rating_in_volts_per_characteristic | 600.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE |
| maximum_operating_temp_per_measurement_point | 110.0 CELSIUS CASE DEGC |
| NSN | 5961-01-325-4713 |
| OVERALL HEIGHT | 0.165 INCHES NOMINAL IN |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 600.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 110.0 CELSIUS CASE DEGC |
| SEMICONDUCTOR MATERIAL | SILICON |
| OVERALL LENGTH | 1.145 INCHES NOMINAL IN |
| OVERALL WIDTH | 0.400 INCHES NOMINAL IN |
| CURRENT RATING PER CHARACTERISTIC | 80.00 AMPERES MAXIMUM PEAK ON-STATE SURGE CURRENT |
| MATERIAL | PLASTIC ENCLOSURE |
| TERMINAL TYPE AND QUANTITY | 3 PIN |
| POWER RATING PER CHARACTERISTIC | 2.2 WATTS MAXIMUM PEAK GATE POWER DISSIPATION |
No substitute or cross-reference records for this part.