TG54: TRANSISTOR.
The TRANSISTOR is a the manufacturer industrial component. Key specifications include overall_length: 0.250 INCHES MINIMUM AND 0.250 INCHES MINIMUM AND 0.340 INCHES MAXIMUM0.340 INCHES MAXIMUM IN, mounting_method: UNTHREADED HOLE(S), overall_diameter: 0.620 INCHES MAXIMUM0.620 INCHES MAXIMUM IN, special_features: JUNCTION PATTERN ARRANGEMENT: NPNJUNCTION PATTERN ARRANGEMENT: NPN, features_provided: HERMETICALLY SEALED CASEHERMETICALLY SEALED CASE, internal_configuration: JUNCTION CONTACTJUNCTION CONTACT. This part is cataloged in the U.S.
Government catalog under NSN 5961-00-078-6727, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| overall_length | 0.250 INCHES MINIMUM AND 0.250 INCHES MINIMUM AND 0.340 INCHES MAXIMUM0.340 INCHES MAXIMUM IN |
| mounting_method | UNTHREADED HOLE(S) |
| overall_diameter | 0.620 INCHES MAXIMUM0.620 INCHES MAXIMUM IN |
| special_features | JUNCTION PATTERN ARRANGEMENT: NPNJUNCTION PATTERN ARRANGEMENT: NPN |
| features_provided | HERMETICALLY SEALED CASEHERMETICALLY SEALED CASE |
| internal_configuration | JUNCTION CONTACTJUNCTION CONTACT |
| semiconductor_material | SILICONSILICON |
| mounting_facility_quantity | 22 |
| terminal_type_and_quantity | 2 UNINSULATED WIRE LEAD AND 2 UNINSULATED WIRE LEAD AND 1 CASE1 CASE |
| power_rating_per_characteristic | 166.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION166.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION |
| current_rating_per_characteristic | 4.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 4.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 2.00 AMPERES MAXIMUM BASE CURRENT, DC2.00 AMPERES MAXIMUM BASE CURRENT, DC |
| maximum_operating_temp_per_measurement_point | 200.0 CELSIUS JUNCTION200.0 CELSIUS JUNCTION DEGC |
| NSN | 5961-00-078-6727 |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 2.5 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN AND 2.5 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 CELSIUS JUNCTION200.0 CELSIUS JUNCTION DEGC |
| MOUNTING FACILITY QUANTITY | 22 |
| OVERALL DIAMETER | 0.620 INCHES MAXIMUM0.620 INCHES MAXIMUM IN |
| MOUNTING METHOD | UNTHREADED HOLE(S) |
| SEMICONDUCTOR MATERIAL | SILICONSILICON |
| OVERALL LENGTH | 0.250 INCHES MINIMUM AND 0.250 INCHES MINIMUM AND 0.340 INCHES MAXIMUM0.340 INCHES MAXIMUM IN |
| INTERNAL CONFIGURATION | JUNCTION CONTACTJUNCTION CONTACT |
| FEATURES PROVIDED | HERMETICALLY SEALED CASEHERMETICALLY SEALED CASE |
| CURRENT RATING PER CHARACTERISTIC | 4.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 4.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 2.00 AMPERES MAXIMUM BASE CURRENT, DC2.00 AMPERES MAXIMUM BASE CURRENT, DC |