TG35C60 — SEMICONDUCTOR DEVICE,THYRISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

TG35C60: SEMICONDUCTOR DEVICE,THYRISTOR.

The SEMICONDUCTOR DEVICE,THYRISTOR is a the manufacturer industrial component. Key specifications include overall_length: 1.197 INCHES NOMINAL IN, mounting_method: UNTHREADED HOLE(S), semiconductor_material: SILICON, terminal_type_and_quantity: 1 CASE AND 1 TAB, SOLDER LUG, current_rating_per_characteristic: 35.00 AMPERES MAXIMUM ON-STATE CURRENT, INSTANTANEOUS AND 300.00 AMPERES MAXIMUM PEAK NONREPETITIVE SURGE CURRENT, voltage_rating_in_volts_per_characteristic: 600.0 NOMINAL REPETITIVE PEAK OFF-STATE VOLTAGE AND 3.0 MAXIMUM GATE TRIGGER VOLTAGE, INSTANTANEOUS. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-305-5271, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

TG35C60

NSN: 5961-01-305-5271
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 59519 — TENNEY ENGINEERING INC HQ (USA)

SPECIFICATIONS

overall_length	1.197 INCHES NOMINAL IN
mounting_method	UNTHREADED HOLE(S)
semiconductor_material	SILICON
mounting_facility_quantity	2
terminal_type_and_quantity	1 CASE AND 1 TAB, SOLDER LUG
current_rating_per_characteristic	35.00 AMPERES MAXIMUM ON-STATE CURRENT, INSTANTANEOUS AND 300.00 AMPERES MAXIMUM PEAK NONREPETITIVE SURGE CURRENT
voltage_rating_in_volts_per_characteristic	600.0 NOMINAL REPETITIVE PEAK OFF-STATE VOLTAGE AND 3.0 MAXIMUM GATE TRIGGER VOLTAGE, INSTANTANEOUS
maximum_operating_temp_per_measurement_point	125.0 CELSIUS JUNCTION DEGC
NSN	5961-01-305-5271

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 NOMINAL REPETITIVE PEAK OFF-STATE VOLTAGE AND 3.0 MAXIMUM GATE TRIGGER VOLTAGE, INSTANTANEOUS

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 CELSIUS JUNCTION DEGC

•

MOUNTING FACILITY QUANTITY: 2

•

MOUNTING METHOD: UNTHREADED HOLE(S)

•

SEMICONDUCTOR MATERIAL: SILICON

•

CURRENT RATING PER CHARACTERISTIC: 35.00 AMPERES MAXIMUM ON-STATE CURRENT, INSTANTANEOUS AND 300.00 AMPERES MAXIMUM PEAK NONREPETITIVE SURGE CURRENT

•

TERMINAL TYPE AND QUANTITY: 1 CASE AND 1 TAB, SOLDER LUG

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	600.0 NOMINAL REPETITIVE PEAK OFF-STATE VOLTAGE AND 3.0 MAXIMUM GATE TRIGGER VOLTAGE, INSTANTANEOUS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	125.0 CELSIUS JUNCTION DEGC
MOUNTING FACILITY QUANTITY	2
MOUNTING METHOD	UNTHREADED HOLE(S)
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	1.197 INCHES NOMINAL IN
CURRENT RATING PER CHARACTERISTIC	35.00 AMPERES MAXIMUM ON-STATE CURRENT, INSTANTANEOUS AND 300.00 AMPERES MAXIMUM PEAK NONREPETITIVE SURGE CURRENT
TERMINAL TYPE AND QUANTITY	1 CASE AND 1 TAB, SOLDER LUG

OTHER ITEMS IN FSC 5961 — Semiconductor Devices and Associated Hardware

Items in the same Federal Supply class. No interchangeability or substitution relationship is implied.

5961-00-000-0150 5961-00-000-4541 5961-00-000-5400 5961-00-000-7614 5961-00-000-8760 5961-00-001-1352 5961-00-001-2624 5961-00-001-2978

SUBSTITUTES & CROSS-REFERENCES

No substitute or cross-reference records for this part.

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Normally procured from the manufacturer (OEM)No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is TG35C60?

TG35C60 is a SEMICONDUCTOR DEVICE,THYRISTOR.

What is the NSN for TG35C60?

TG35C60 is cataloged in the U.S. Government catalog under NSN 5961-01-305-5271. This indicates validated use in U.S. government and defense supply chains.

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TG35C60 — SEMICONDUCTOR DEVICE,THYRISTOR

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