SVT250-20B: SEMICONDUCTOR DEVICE SET.
The SEMICONDUCTOR DEVICE SET is a the manufacturer industrial component. Key specifications include overall_length: 1.330 INCHES MAXIMUM ALL TRANSISTOR IN, mounting_method: THREADED STUD(S) ALL TRANSISTOR, features_provided: HERMETICALLY SEALED CASE, nominal_thread_size: 0.250 INCHES ALL TRANSISTOR IN, internal_configuration: JUNCTION CONTACT ALL TRANSISTOR, semiconductor_material: SILICON ALL TRANSISTOR. This part is cataloged in the U.S.
Government catalog under NSN 5961-01-034-4950, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| overall_length | 1.330 INCHES MAXIMUM ALL TRANSISTOR IN |
| mounting_method | THREADED STUD(S) ALL TRANSISTOR |
| special_features | MATCHED SET OF 4 TRANSISTORS; MATCHED TO WITHIN 200 MV MAX VCE; MATCHED TO WITHIN 20% OF THE MEAN BETA FOR THAT GROUP OF 4 |
| features_provided | HERMETICALLY SEALED CASE |
| nominal_thread_size | 0.250 INCHES ALL TRANSISTOR IN |
| internal_configuration | JUNCTION CONTACT ALL TRANSISTOR |
| semiconductor_material | SILICON ALL TRANSISTOR |
| thread_series_designator | UNF ALL TRANSISTOR |
| mounting_facility_quantity | 1 ALL TRANSISTOR |
| overall_width_across_flats | 0.667 INCHES MINIMUM AND 0.687 INCHES MAXIMUM ALL TRANSISTOR IN |
| terminal_type_and_quantity | 3 TAB, SOLDER LUG ALL TRANSISTOR |
| component_name_and_quantity | 4 TRANSISTOR |
| NSN | 5961-01-034-4950 |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 275.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 250.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN ALL TRANSISTOR |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 CELSIUS AMBIENT AIR ALL TRANSISTOR DEGC |
| MOUNTING FACILITY QUANTITY | 1 ALL TRANSISTOR |
| COMPONENT FUNCTION RELATIONSHIP | MATCHED |
| MOUNTING METHOD | THREADED STUD(S) ALL TRANSISTOR |
| INTERNAL JUNCTION CONFIGURATION | NPN ALL TRANSISTOR |
| SEMICONDUCTOR MATERIAL | SILICON ALL TRANSISTOR |
| OVERALL LENGTH | 1.330 INCHES MAXIMUM ALL TRANSISTOR IN |
| COMPONENT NAME AND QUANTITY | 4 TRANSISTOR |
| INTERNAL CONFIGURATION | JUNCTION CONTACT ALL TRANSISTOR |