The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: SILICON SEMICONDUCTOR, overall_length: 0.300 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 1.000 INCHES MINIMUM IN, overall_diameter: 0.108 INCHES MAXIMUM IN, features_provided: BURN IN AND HERMETICALLY SEALED CASE. This product is currently in active production with full OEM support.
This part is cataloged in the Federal Logistics Information System (FLIS) under NSN 5961-00-481-5432, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| material | SILICON SEMICONDUCTOR |
| overall_length | 0.300 INCHES MAXIMUM IN |
| mounting_method | TERMINAL |
| terminal_length | 1.000 INCHES MINIMUM IN |
| overall_diameter | 0.108 INCHES MAXIMUM IN |
| features_provided | BURN IN AND HERMETICALLY SEALED CASE |
| terminal_type_and_quantity | 2 UNINSULATED WIRE LEAD |
| power_rating_per_characteristic | 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
| voltage_rating_in_volts_per_characteristic | 20.0 MAXIMUM REVERSE VOLTAGE, PEAK |
| maximum_operating_temp_per_measurement_point | 175.0 CELSIUS AMBIENT AIR DEGC |
| NSN | 5961-00-481-5432 |
| MOUNTING METHOD | TERMINAL |
| OVERALL LENGTH | 0.300 INCHES MAXIMUM IN |
| OVERALL DIAMETER | 0.108 INCHES MAXIMUM IN |
| MATERIAL | GLASS ENCLOSURE |
| TERMINAL LENGTH | 1.000 INCHES MINIMUM IN |
| POWER RATING PER CHARACTERISTIC | 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 20.0 MAXIMUM REVERSE VOLTAGE, PEAK |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 CELSIUS AMBIENT AIR DEGC |
| FEATURES PROVIDED | BURN IN AND HERMETICALLY SEALED CASE |
| MATERIAL | SILICON SEMICONDUCTOR |