STA8010: SEMICONDUCTOR DEVICES,UNITIZED.
The SEMICONDUCTOR DEVICES,UNITIZED is a the manufacturer industrial component. Key specifications include overall_width: 1.000 INCHES NOMINAL1.000 INCHES NOMINAL IN, overall_height: 0.555 INCHES NOMINAL0.555 INCHES NOMINAL IN, overall_length: 1.499 INCHES NOMINAL1.499 INCHES NOMINAL IN, mounting_method: TERMINALTERMINAL, special_features: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPNALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN, features_provided: HERMETICALLY SEALED CASEHERMETICALLY SEALED CASE. This part is cataloged in the U.S.
Government catalog under NSN 5961-01-123-1540, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| overall_width | 1.000 INCHES NOMINAL1.000 INCHES NOMINAL IN |
| overall_height | 0.555 INCHES NOMINAL0.555 INCHES NOMINAL IN |
| overall_length | 1.499 INCHES NOMINAL1.499 INCHES NOMINAL IN |
| mounting_method | TERMINALTERMINAL |
| special_features | ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPNALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN |
| features_provided | HERMETICALLY SEALED CASEHERMETICALLY SEALED CASE |
| semiconductor_material | SILICON ALL TRANSISTORSILICON ALL TRANSISTOR |
| mounting_facility_quantity | 22 |
| terminal_type_and_quantity | 8 PIN8 PIN |
| component_name_and_quantity | 2 TRANSISTOR2 TRANSISTOR |
| power_rating_per_characteristic | 15.0 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR15.0 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR |
| voltage_rating_in_volts_per_characteristic | 90.0 MAXIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED ALL TRANSISTOR90.0 MAXIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED ALL TRANSISTOR |
| NSN | 5961-01-123-1540 |
| OVERALL HEIGHT | 0.555 INCHES NOMINAL0.555 INCHES NOMINAL IN |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 90.0 MAXIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED ALL TRANSISTOR90.0 MAXIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED ALL TRANSISTOR |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 CELSIUS AMBIENT AIR150.0 CELSIUS AMBIENT AIR DEGC |
| MOUNTING FACILITY QUANTITY | 22 |
| MOUNTING METHOD | TERMINALTERMINAL |
| SEMICONDUCTOR MATERIAL | SILICON ALL TRANSISTORSILICON ALL TRANSISTOR |
| OVERALL LENGTH | 1.499 INCHES NOMINAL1.499 INCHES NOMINAL IN |
| COMPONENT NAME AND QUANTITY | 2 TRANSISTOR2 TRANSISTOR |
| OVERALL WIDTH | 1.000 INCHES NOMINAL1.000 INCHES NOMINAL IN |
| FEATURES PROVIDED | HERMETICALLY SEALED CASEHERMETICALLY SEALED CASE |