SS-32592: TRANSISTOR.
The TRANSISTOR is a the manufacturer industrial component. Key specifications include special_features: JUNCTION PATTERN ARRANGEMENT: NPN, internal_configuration: JUNCTION CONTACT, semiconductor_material: SILICON, power_rating_per_characteristic: 3.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION, current_rating_per_characteristic: 400.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC, maximum_operating_temp_per_measurement_point: 150.0 CELSIUS JUNCTION DEGC. This part is cataloged in the U.S.
Government catalog under NSN 5961-01-382-7610, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| special_features | JUNCTION PATTERN ARRANGEMENT: NPN |
| internal_configuration | JUNCTION CONTACT |
| semiconductor_material | SILICON |
| power_rating_per_characteristic | 3.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION |
| current_rating_per_characteristic | 400.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC |
| maximum_operating_temp_per_measurement_point | 150.0 CELSIUS JUNCTION DEGC |
| NSN | 5961-01-382-7610 |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 16.0 MAXIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED AND 36.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 4.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 CELSIUS JUNCTION DEGC |
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| CURRENT RATING PER CHARACTERISTIC | 400.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
| POWER RATING PER CHARACTERISTIC | 3.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION |