SP910517-R: LIGHT EMITTING DIODE.
The LIGHT EMITTING DIODE is a the manufacturer industrial component. Key specifications include overall_length: 0.620 INCHES MAXIMUM IN, mounting_method: PRESS FIT, overall_diameter: 0.280 INCHES NOMINAL IN, special_features: BIPOLAR, MULTI-CHIP CONSTRUCTION, luminous_intensity: 29.0 MILLICANDELA NOMINAL, semiconductor_material: GALLIUM ARSENIDE PHOSPHIDE. This part is cataloged in the U.S.
Government catalog under NSN 5980-01-369-3718, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| overall_length | 0.620 INCHES MAXIMUM IN |
| mounting_method | PRESS FIT |
| overall_diameter | 0.280 INCHES NOMINAL IN |
| special_features | BIPOLAR, MULTI-CHIP CONSTRUCTION |
| luminous_intensity | 29.0 MILLICANDELA NOMINAL |
| semiconductor_material | GALLIUM ARSENIDE PHOSPHIDE |
| terminal_type_and_quantity | 2 CASE |
| color_tone_produced_per_source | RED SEMICONDUCTOR |
| power_rating_per_characteristic | 220.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION |
| current_rating_per_characteristic | 14.00 MILLIAMPERES NOMINAL FORWARD CURRENT, DC |
| voltage_rating_in_volts_per_characteristic | 28.0 NOMINAL FORWARD VOLTAGE, DC |
| maximum_operating_temp_per_measurement_point | 60.0 CELSIUS AMBIENT AIR DEGC |
| NSN | 5980-01-369-3718 |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 28.0 NOMINAL FORWARD VOLTAGE, DC |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 60.0 CELSIUS AMBIENT AIR DEGC |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | T-1 3/4 |
| OVERALL DIAMETER | 0.280 INCHES NOMINAL IN |
| MOUNTING METHOD | PRESS FIT |
| SEMICONDUCTOR MATERIAL | GALLIUM ARSENIDE PHOSPHIDE |
| LUMINOUS INTENSITY | 29.0 MILLICANDELA NOMINAL |
| OVERALL LENGTH | 0.620 INCHES MAXIMUM IN |
| CURRENT RATING PER CHARACTERISTIC | 14.00 MILLIAMPERES NOMINAL FORWARD CURRENT, DC |
| SPECIAL FEATURES | BIPOLAR, MULTI-CHIP CONSTRUCTION |