SNF1059 — TRANSISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

SNF1059: TRANSISTOR.

The TRANSISTOR is a the manufacturer industrial component. Key specifications include overall_width: 1.200 INCHES NOMINAL IN, overall_height: 0.250 INCHES NOMINAL IN, overall_length: 1.832 INCHES NOMINAL IN, mounting_method: UNTHREADED HOLE(S), internal_configuration: FIELD EFFECT, semiconductor_material: SILICON. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-413-3882, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

SNF1059

NSN: 5961-01-413-3882
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 43611 — MICROSEMI CORP - MASSACHUSETTS (USA)

SPECIFICATIONS

overall_width	1.200 INCHES NOMINAL IN
overall_height	0.250 INCHES NOMINAL IN
overall_length	1.832 INCHES NOMINAL IN
mounting_method	UNTHREADED HOLE(S)
internal_configuration	FIELD EFFECT
semiconductor_material	SILICON
mounting_facility_quantity	2
terminal_type_and_quantity	12 PIN AND 1 CASE
power_rating_per_characteristic	416.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
current_rating_per_characteristic	10.00 AMPERES MAXIMUM DRAIN CURRENT AND 10.00 AMPERES MAXIMUM SOURCE CURRENT
voltage_rating_in_volts_per_characteristic	1000.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 1000.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 30.0 MAXIMUM GATE TO SOURCE VOLTAGE
maximum_operating_temp_per_measurement_point	150.0 CELSIUS JUNCTION DEGC
NSN	5961-01-413-3882

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 1000.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 30.0 MAXIMUM GATE TO SOURCE VOLTAGE

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 CELSIUS JUNCTION DEGC

•

MOUNTING FACILITY QUANTITY: 2

•

MOUNTING METHOD: UNTHREADED HOLE(S)

•

SEMICONDUCTOR MATERIAL: SILICON

•

INTERNAL CONFIGURATION: FIELD EFFECT

TECHNICAL CHARACTERISTICS

OVERALL HEIGHT	0.250 INCHES NOMINAL IN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	1000.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 1000.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 30.0 MAXIMUM GATE TO SOURCE VOLTAGE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	150.0 CELSIUS JUNCTION DEGC
MOUNTING FACILITY QUANTITY	2
MOUNTING METHOD	UNTHREADED HOLE(S)
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	1.832 INCHES NOMINAL IN
INTERNAL CONFIGURATION	FIELD EFFECT
OVERALL WIDTH	1.200 INCHES NOMINAL IN
CURRENT RATING PER CHARACTERISTIC	10.00 AMPERES MAXIMUM DRAIN CURRENT AND 10.00 AMPERES MAXIMUM SOURCE CURRENT

SUBSTITUTES & CROSS-REFERENCES 1

723079-7Reference document

Same NSN cross-reference

Reference document — Vendor item drawing reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Normally procured from the manufacturer (OEM)No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is SNF1059?

SNF1059 is a TRANSISTOR.

What parts can replace SNF1059?

There is 1 known substitute for SNF1059: 723079-7. Substitute compatibility should be verified for your specific system.

What is the NSN for SNF1059?

SNF1059 is cataloged in the U.S. Government catalog under NSN 5961-01-413-3882. This indicates validated use in U.S. government and defense supply chains.

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SNF1059 — TRANSISTOR

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