The MICROCIRCUIT,DIGITAL is a the manufacturer industrial component. Key specifications include body_width: 0.310 INCHES NOMINAL IN, body_height: 0.155 INCHES NOMINAL IN, body_length: 0.786 INCHES NOMINAL IN, features_provided: BURN IN AND STABILIZED AND W/OPEN COLLECTOR, output_logic_form: TRANSISTOR-TRANSISTOR LOGIC, inclosure_material: SILICON. This product is currently in active production with full OEM support.
This part is cataloged in the Federal Logistics Information System (FLIS) under NSN 5962-00-146-8614, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| body_width | 0.310 INCHES NOMINAL IN |
| body_height | 0.155 INCHES NOMINAL IN |
| body_length | 0.786 INCHES NOMINAL IN |
| features_provided | BURN IN AND STABILIZED AND W/OPEN COLLECTOR |
| output_logic_form | TRANSISTOR-TRANSISTOR LOGIC |
| inclosure_material | SILICON |
| storage_temp_range | -65.0 TO 150.0 CELSIUS DEGC |
| operating_temp_range | -55.0 TO 125.0 CELSIUS DEGC |
| input_circuit_pattern | QUAD 2 INPUT |
| inclosure_configuration | DUAL-IN-LINE |
| design_function_and_quantity | 4 GATE, NAND |
| time_rating_per_chacteristic | 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 15.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT NS |
| NSN | 5962-00-146-8614 |
| TEST DATA DOCUMENT | 97942-578R559 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |
| BODY LENGTH | 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM IN |
| BODY WIDTH | 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM IN |
| INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CASE OUTLINE SOURCE AND DESIGNATOR | T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL |
| MAXIMUM POWER DISSIPATION RATING | 160.0 MILLIWATTS |
| TIME RATING PER CHACTERISTIC | 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 15.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT NS |
| INCLOSURE MATERIAL | CERAMIC AND GLASS |
| DESIGN FUNCTION AND QUANTITY | 4 GATE, NAND |
| FEATURES PROVIDED | HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND MEDIUM POWER AND MEDIUM SPEED AND W/OPEN COLLECTOR |