SM-A-945195 — TRANSISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

SM-A-945195: TRANSISTOR.

The TRANSISTOR is a the manufacturer industrial component. Key specifications include overall_length: 0.250 INCHES NOMINAL IN, mounting_method: TERMINAL, terminal_length: 0.500 INCHES MINIMUM IN, overall_diameter: 0.359 INCHES NOMINAL IN, features_provided: HERMETICALLY SEALED CASE, internal_configuration: FIELD EFFECT. This part is cataloged in the U.S.

Government catalog under NSN 5961-00-496-4643, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

SM-A-945195

NSN: 5961-00-496-4643
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 80063 — US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR (USA)

SPECIFICATIONS

overall_length	0.250 INCHES NOMINAL IN
mounting_method	TERMINAL
terminal_length	0.500 INCHES MINIMUM IN
overall_diameter	0.359 INCHES NOMINAL IN
features_provided	HERMETICALLY SEALED CASE
internal_configuration	FIELD EFFECT
semiconductor_material	SILICON
terminal_circle_diameter	0.200 INCHES NOMINAL IN
terminal_type_and_quantity	4 UNINSULATED WIRE LEAD
power_rating_per_characteristic	300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
current_rating_per_characteristic	30.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, AVERAGE
voltage_rating_in_volts_per_characteristic	35.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 25.0 MAXIMUM ON-STATE DRAIN TO SOURCE VOLTAGE AND 35.0 MAXIMUM GATE TO SOURCE VOLTAGE
NSN	5961-00-496-4643

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 25.0 MAXIMUM ON-STATE DRAIN TO SOURCE VOLTAGE AND 35.0 MAXIMUM GATE TO SOURCE VOLTAGE

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 CELSIUS JUNCTION DEGC

•

OVERALL DIAMETER: 0.359 INCHES NOMINAL IN

•

TERMINAL LENGTH: 0.500 INCHES MINIMUM IN

•

MOUNTING METHOD: TERMINAL

•

SEMICONDUCTOR MATERIAL: SILICON

•

INTERNAL CONFIGURATION: FIELD EFFECT

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	35.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 25.0 MAXIMUM ON-STATE DRAIN TO SOURCE VOLTAGE AND 35.0 MAXIMUM GATE TO SOURCE VOLTAGE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	200.0 CELSIUS JUNCTION DEGC
OVERALL DIAMETER	0.359 INCHES NOMINAL IN
TERMINAL LENGTH	0.500 INCHES MINIMUM IN
MOUNTING METHOD	TERMINAL
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	0.250 INCHES NOMINAL IN
INTERNAL CONFIGURATION	FIELD EFFECT
FEATURES PROVIDED	HERMETICALLY SEALED CASE
CURRENT RATING PER CHARACTERISTIC	30.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, AVERAGE

SUBSTITUTES & CROSS-REFERENCES 5

SC5960-0055-1Reference document

Same NSN cross-reference