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SIPT430TA(3) — SEMICONDUCTOR DEVICE,THYRISTOR

✓ Government record, cited
— · SFP TRANSCEIVER
PRODUCT OVERVIEW

SIPT430TA(3): SEMICONDUCTOR DEVICE,THYRISTOR.

The SEMICONDUCTOR DEVICE,THYRISTOR is a the manufacturer industrial component. Key specifications include overall_length: 1.400 INCHES NOMINAL IN, mounting_method: THREADED STUD(S), semiconductor_material: SILICON, end_item_identification: AN/ASM-686A A, terminal_type_and_quantity: 3 TAB, SOLDER LUG, power_rating_per_characteristic: 40.0 WATTS NOMINAL PEAK GATE POWER DISSIPATION. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-515-4758, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS
SIPT430TA(3)
NSN: 5961-01-515-4758
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 0S876 — HUTSON INDUSTRIES (USA)
SPECIFICATIONS
overall_length1.400 INCHES NOMINAL IN
mounting_methodTHREADED STUD(S)
semiconductor_materialSILICON
end_item_identificationAN/ASM-686A A
mounting_facility_quantity1
terminal_type_and_quantity3 TAB, SOLDER LUG
power_rating_per_characteristic40.0 WATTS NOMINAL PEAK GATE POWER DISSIPATION
current_rating_per_characteristic30.00 AMPERES NOMINAL ON-STATE CURRENT, RMS TOTAL
voltage_rating_in_volts_per_characteristic400.0 NOMINAL REPETITIVE PEAK OFF-STATE VOLTAGE
maximum_operating_temp_per_measurement_point110.0 CELSIUS JUNCTION DEGC
NSN5961-01-515-4758
COMPONENT DIAGRAM
BAIL LATCH 10G SFP+ 850nm · SR (MMF, 300m) DOM: Digital Optical Monitoring TX RX LC DUPLEX 20-PIN EDGE CONNECTOR ~56.5 mm ~13.4mm SFP+ TRANSCEIVER | 10G | 850nm | SR (MMF, 300m) Hot-swappable | LC duplex fiber | DDM/DOM supported TITLE SFP+ XCVR PN SIPT430TA(3) MFR OEM SEMICONDUCTOR DEVICE,THYRISTOR
KEY FEATURES
•
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 NOMINAL REPETITIVE PEAK OFF-STATE VOLTAGE
•
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 110.0 CELSIUS JUNCTION DEGC
•
MOUNTING FACILITY QUANTITY: 1
•
MOUNTING METHOD: THREADED STUD(S)
•
SEMICONDUCTOR MATERIAL: SILICON
•
CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES NOMINAL ON-STATE CURRENT, RMS TOTAL
TECHNICAL CHARACTERISTICS
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC400.0 NOMINAL REPETITIVE PEAK OFF-STATE VOLTAGE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT110.0 CELSIUS JUNCTION DEGC
MOUNTING FACILITY QUANTITY1
MOUNTING METHODTHREADED STUD(S)
SEMICONDUCTOR MATERIALSILICON
OVERALL LENGTH1.400 INCHES NOMINAL IN
CURRENT RATING PER CHARACTERISTIC30.00 AMPERES NOMINAL ON-STATE CURRENT, RMS TOTAL
END ITEM IDENTIFICATIONAN/ASM-686A A
TERMINAL TYPE AND QUANTITY3 TAB, SOLDER LUG
POWER RATING PER CHARACTERISTIC40.0 WATTS NOMINAL PEAK GATE POWER DISSIPATION
OTHER ITEMS IN FSC 5961 — Semiconductor Devices and Associated Hardware
Items in the same Federal Supply class. No interchangeability or substitution relationship is implied.
5961-00-000-0150 5961-00-000-4541 5961-00-000-5400 5961-00-000-7614 5961-00-000-8760 5961-00-001-1352 5961-00-001-2624 5961-00-001-2978
SUBSTITUTES & CROSS-REFERENCES

No substitute or cross-reference records for this part.

LIFECYCLE
NSN statusActive· U.S. Government catalog
Acquisition advice: Terminal item — stock exhausted; no further procurementNo demilitarization required
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FREQUENTLY ASKED QUESTIONS
What is SIPT430TA(3)?
SIPT430TA(3) is a SEMICONDUCTOR DEVICE,THYRISTOR.
What is the NSN for SIPT430TA(3)?
SIPT430TA(3) is cataloged in the U.S. Government catalog under NSN 5961-01-515-4758. This indicates validated use in U.S. government and defense supply chains.
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