SI7460DP-T1-E3: TRANSISTOR.
The TRANSISTOR is a the manufacturer industrial component. Key specifications include material: PLASTIC ENCLOSURE, overall_width: 3.81 MILLIMETERS NOMINAL MM, overall_height: 1.04 MILLIMETERS NOMINAL MM, overall_length: 5.89 MILLIMETERS NOMINAL MM, mounting_method: TERMINAL, semiconductor_material: SILICON. This part is cataloged in the U.S.
Government catalog under NSN 5961-01-651-0387, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| material | PLASTIC ENCLOSURE |
| overall_width | 3.81 MILLIMETERS NOMINAL MM |
| overall_height | 1.04 MILLIMETERS NOMINAL MM |
| overall_length | 5.89 MILLIMETERS NOMINAL MM |
| mounting_method | TERMINAL |
| semiconductor_material | SILICON |
| end_item_identification | V-22 AIRCRAFT |
| terminal_type_and_quantity | 8 BONDING PAD |
| power_rating_per_characteristic | 1.9 WATTS NOMINAL POWER OUTPUT |
| current_rating_per_characteristic | 11.0 AMPERES NOMINAL DRAIN CURRENT |
| part_name_assigned_by_controlling_agency | TRANS MOSFET N-CH |
| voltage_rating_in_volts_per_characteristic | 60.0 NOMINAL DRAIN TO SOURCE VOLTAGE |
| NSN | 5961-01-651-0387 |
| OVERALL HEIGHT | 1.04 MILLIMETERS NOMINAL MM |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 60.0 NOMINAL DRAIN TO SOURCE VOLTAGE |
| MOUNTING METHOD | TERMINAL |
| SEMICONDUCTOR MATERIAL | SILICON |
| OVERALL LENGTH | 5.89 MILLIMETERS NOMINAL MM |
| OVERALL WIDTH | 3.81 MILLIMETERS NOMINAL MM |
| CURRENT RATING PER CHARACTERISTIC | 11.0 AMPERES NOMINAL DRAIN CURRENT |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | TRANS MOSFET N-CH |
| END ITEM IDENTIFICATION | V-22 AIRCRAFT |
| MATERIAL | PLASTIC ENCLOSURE |
No substitute or cross-reference records for this part.