SDT6903: TRANSISTOR.
The TRANSISTOR is a the manufacturer industrial component. Key specifications include overall_height: 0.300 INCHES MAXIMUM IN, mounting_method: UNTHREADED HOLE(S), overall_diameter: 0.475 INCHES MINIMUM AND 0.495 INCHES MAXIMUM IN, special_features: JUNCTION PATTERN ARRANGEMENT: NPN, semiconductor_material: SILICON, power_rating_per_characteristic: 20.0 WATTS MAXIMUM TOTAL POWER DISSIPATION. This part is cataloged in the U.S.
Government catalog under NSN 5961-01-077-0309, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| overall_height | 0.300 INCHES MAXIMUM IN |
| mounting_method | UNTHREADED HOLE(S) |
| overall_diameter | 0.475 INCHES MINIMUM AND 0.495 INCHES MAXIMUM IN |
| special_features | JUNCTION PATTERN ARRANGEMENT: NPN |
| semiconductor_material | SILICON |
| mounting_facility_quantity | 2 |
| power_rating_per_characteristic | 20.0 WATTS MAXIMUM TOTAL POWER DISSIPATION |
| maximum_operating_temp_per_measurement_point | 200.0 CELSIUS JUNCTION DEGC |
| NSN | 5961-01-077-0309 |
| OVERALL HEIGHT | 0.300 INCHES MAXIMUM IN |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 CELSIUS JUNCTION DEGC |
| MOUNTING FACILITY QUANTITY | 2 |
| OVERALL DIAMETER | 0.475 INCHES MINIMUM AND 0.495 INCHES MAXIMUM IN |
| MOUNTING METHOD | UNTHREADED HOLE(S) |
| SEMICONDUCTOR MATERIAL | SILICON |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
| POWER RATING PER CHARACTERISTIC | 20.0 WATTS MAXIMUM TOTAL POWER DISSIPATION |
No substitute or cross-reference records for this part.