SDR3JTX — SEMICONDUCTOR DEVICE,DIODE

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

SDR3JTX: SEMICONDUCTOR DEVICE,DIODE.

The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: GLASS ENCLOSURE, overall_length: 0.260 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 1.000 INCHES MINIMUM IN, overall_diameter: 0.250 INCHES MAXIMUM IN, features_provided: HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-342-5822, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

SDR3JTX

NSN: 5961-01-342-5822
NIINs: 013425822, 013432446
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 30043 — SOLID STATE DEVICES, INC (USA)

SPECIFICATIONS

material	GLASS ENCLOSURE
overall_length	0.260 INCHES MAXIMUM IN
mounting_method	TERMINAL
terminal_length	1.000 INCHES MINIMUM IN
overall_diameter	0.250 INCHES MAXIMUM IN
features_provided	HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE
terminal_type_and_quantity	2 UNINSULATED WIRE LEAD
function_for_which_designed	RECTIFIER
current_rating_per_characteristic	18.00 AMPERES MAXIMUM FORWARD CURRENT, REPETITIVE, MAXIMUM PEAK TOTAL VALUE
voltage_rating_in_volts_per_characteristic	600.0 MAXIMUM REVERSE VOLTAGE, DC AND 420.0 MAXIMUM REVERSE VOLTAGE, TOTAL RMS
maximum_operating_temp_per_measurement_point	175.0 CELSIUS JUNCTION DEGC
NSN	5961-01-342-5822

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REVERSE VOLTAGE, DC AND 420.0 MAXIMUM REVERSE VOLTAGE, TOTAL RMS

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 CELSIUS JUNCTION DEGC

•

OVERALL DIAMETER: 0.250 INCHES MAXIMUM IN

•

TERMINAL LENGTH: 1.000 INCHES MINIMUM IN

•

MOUNTING METHOD: TERMINAL

•

FEATURES PROVIDED: HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE

•

CURRENT RATING PER CHARACTERISTIC: 18.00 AMPERES MAXIMUM FORWARD CURRENT, REPETITIVE, MAXIMUM PEAK TOTAL VALUE

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	600.0 MAXIMUM REVERSE VOLTAGE, DC AND 420.0 MAXIMUM REVERSE VOLTAGE, TOTAL RMS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	175.0 CELSIUS JUNCTION DEGC
OVERALL DIAMETER	0.250 INCHES MAXIMUM IN
TERMINAL LENGTH	1.000 INCHES MINIMUM IN
MOUNTING METHOD	TERMINAL
OVERALL LENGTH	0.260 INCHES MAXIMUM IN
FEATURES PROVIDED	HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE
CURRENT RATING PER CHARACTERISTIC	18.00 AMPERES MAXIMUM FORWARD CURRENT, REPETITIVE, MAXIMUM PEAK TOTAL VALUE
FUNCTION FOR WHICH DESIGNED	RECTIFIER
MATERIAL	SILICON SEMICONDUCTOR

SUBSTITUTES & CROSS-REFERENCES

No substitute or cross-reference records for this part.

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Normally procured from the manufacturer (OEM)No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is SDR3JTX?

SDR3JTX is a SEMICONDUCTOR DEVICE,DIODE.

What is the NSN for SDR3JTX?

SDR3JTX is cataloged in the U.S. Government catalog under NSN 5961-01-342-5822. This indicates validated use in U.S. government and defense supply chains.

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SDR3JTX — SEMICONDUCTOR DEVICE,DIODE

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