SDH3770: SEMICONDUCTOR DEVICES,UNITIZED.
The SEMICONDUCTOR DEVICES,UNITIZED is a the manufacturer industrial component. Key specifications include overall_length: 0.180 INCHES MAXIMUM0.180 INCHES MAXIMUM IN, mounting_method: TERMINALTERMINAL, terminal_length: 1.500 INCHES MINIMUM1.500 INCHES MINIMUM IN, overall_diameter: 0.370 INCHES MAXIMUM0.370 INCHES MAXIMUM IN, semiconductor_material: SILICON ALL TRANSISTORSILICON ALL TRANSISTOR, end_item_identification: GMSRSMODKIT12GMSRSMODKIT12. This part is cataloged in the U.S.
Government catalog under NSN 5961-01-121-9648, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| overall_length | 0.180 INCHES MAXIMUM0.180 INCHES MAXIMUM IN |
| mounting_method | TERMINALTERMINAL |
| terminal_length | 1.500 INCHES MINIMUM1.500 INCHES MINIMUM IN |
| overall_diameter | 0.370 INCHES MAXIMUM0.370 INCHES MAXIMUM IN |
| semiconductor_material | SILICON ALL TRANSISTORSILICON ALL TRANSISTOR |
| end_item_identification | GMSRSMODKIT12GMSRSMODKIT12 |
| terminal_type_and_quantity | 6 UNINSULATED WIRE LEAD6 UNINSULATED WIRE LEAD |
| component_name_and_quantity | 2 TRANSISTOR2 TRANSISTOR |
| power_rating_per_characteristic | 500.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION ALL TRANSISTOR500.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION ALL TRANSISTOR |
| current_rating_per_characteristic | 600.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR600.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR |
| nuclear_hardness_critical_feature | HARDENEDHARDENED |
| maximum_operating_temp_per_measurement_point | 200.0 CELSIUS JUNCTION200.0 CELSIUS JUNCTION DEGC |
| NSN | 5961-01-121-9648 |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 75.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 75.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 40.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 40.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 6.0 MINIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN ALL TRANSISTOR6.0 MINIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN ALL TRANSISTOR |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 CELSIUS JUNCTION200.0 CELSIUS JUNCTION DEGC |
| OVERALL DIAMETER | 0.370 INCHES MAXIMUM0.370 INCHES MAXIMUM IN |
| TERMINAL LENGTH | 1.500 INCHES MINIMUM1.500 INCHES MINIMUM IN |
| MOUNTING METHOD | TERMINALTERMINAL |
| SEMICONDUCTOR MATERIAL | SILICON ALL TRANSISTORSILICON ALL TRANSISTOR |
| OVERALL LENGTH | 0.180 INCHES MAXIMUM0.180 INCHES MAXIMUM IN |
| COMPONENT NAME AND QUANTITY | 2 TRANSISTOR2 TRANSISTOR |
| CURRENT RATING PER CHARACTERISTIC | 600.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR600.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR |
| TEST DATA DOCUMENT | 81205-BACS8A DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING)81205-BACS8A DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |