SD3137H — SEMICONDUCTOR DEVICES,UNITIZED

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

SD3137H: SEMICONDUCTOR DEVICES,UNITIZED.

The SEMICONDUCTOR DEVICES,UNITIZED is a the manufacturer industrial component. Key specifications include overall_length: 0.260 INCHES MAXIMUM0.260 INCHES MAXIMUM IN, mounting_method: TERMINALTERMINAL, terminal_length: 0.750 INCHES MAXIMUM0.750 INCHES MAXIMUM IN, overall_diameter: 0.370 INCHES MAXIMUM0.370 INCHES MAXIMUM IN, special_features: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPNALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN, features_provided: HERMETICALLY SEALED CASEHERMETICALLY SEALED CASE. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-117-9335, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

SD3137H

NSN: 5961-01-117-9335
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 04713 — FREESCALE SEMICONDUCTOR, INC. (USA)

SPECIFICATIONS

overall_length	0.260 INCHES MAXIMUM0.260 INCHES MAXIMUM IN
mounting_method	TERMINALTERMINAL
terminal_length	0.750 INCHES MAXIMUM0.750 INCHES MAXIMUM IN
overall_diameter	0.370 INCHES MAXIMUM0.370 INCHES MAXIMUM IN
special_features	ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPNALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
features_provided	HERMETICALLY SEALED CASEHERMETICALLY SEALED CASE
semiconductor_material	SILICON ALL TRANSISTORSILICON ALL TRANSISTOR
terminal_circle_diameter	0.200 INCHES NOMINAL0.200 INCHES NOMINAL IN
terminal_type_and_quantity	6 UNINSULATED WIRE LEAD6 UNINSULATED WIRE LEAD
component_name_and_quantity	2 TRANSISTOR2 TRANSISTOR
power_rating_per_characteristic	1.25 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR1.25 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
current_rating_per_characteristic	30.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR30.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
NSN	5961-01-117-9335

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 6.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN ALL TRANSISTOR6.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN ALL TRANSISTOR

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 CELSIUS JUNCTION200.0 CELSIUS JUNCTION DEGC

•

OVERALL DIAMETER: 0.370 INCHES MAXIMUM0.370 INCHES MAXIMUM IN

•

TERMINAL LENGTH: 0.750 INCHES MAXIMUM0.750 INCHES MAXIMUM IN

•

MOUNTING METHOD: TERMINALTERMINAL

•

TRANSFER RATIO: 175.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 175.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 600.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER ALL TRANSISTOR600.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER ALL TRANSISTOR

•

SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTORSILICON ALL TRANSISTOR

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 6.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN ALL TRANSISTOR6.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN ALL TRANSISTOR
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	200.0 CELSIUS JUNCTION200.0 CELSIUS JUNCTION DEGC
OVERALL DIAMETER	0.370 INCHES MAXIMUM0.370 INCHES MAXIMUM IN
TERMINAL LENGTH	0.750 INCHES MAXIMUM0.750 INCHES MAXIMUM IN
MOUNTING METHOD	TERMINALTERMINAL
TRANSFER RATIO	175.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 175.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 600.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER ALL TRANSISTOR600.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER ALL TRANSISTOR
SEMICONDUCTOR MATERIAL	SILICON ALL TRANSISTORSILICON ALL TRANSISTOR
OVERALL LENGTH	0.260 INCHES MAXIMUM0.260 INCHES MAXIMUM IN
COMPONENT NAME AND QUANTITY	2 TRANSISTOR2 TRANSISTOR
FEATURES PROVIDED	HERMETICALLY SEALED CASEHERMETICALLY SEALED CASE

OTHER ITEMS IN FSC 5961 — Semiconductor Devices and Associated Hardware

Items in the same Federal Supply class. No interchangeability or substitution relationship is implied.

5961-00-000-0150 5961-00-000-4541 5961-00-000-5400 5961-00-000-7614 5961-00-000-8760 5961-00-001-1352 5961-00-001-2624 5961-00-001-2978

SUBSTITUTES & CROSS-REFERENCES 1

ST1585Reference document

Same NSN cross-reference

Reference document — Advisory reference — outside the item-of-supply concept

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Normally procured from the manufacturer (OEM)Demilitarization required — mutilation

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FREQUENTLY ASKED QUESTIONS

What is SD3137H?

SD3137H is a SEMICONDUCTOR DEVICES,UNITIZED.

What parts can replace SD3137H?

There is 1 known substitute for SD3137H: ST1585. Substitute compatibility should be verified for your specific system.

What is the NSN for SD3137H?

SD3137H is cataloged in the U.S. Government catalog under NSN 5961-01-117-9335. This indicates validated use in U.S. government and defense supply chains.

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SD3137H — SEMICONDUCTOR DEVICES,UNITIZED

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