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SD2008 — SEMICONDUCTOR DEVICE,DIODE

✓ Government record, cited
— · MRO · MRO_GENERAL
PRODUCT OVERVIEW

SD2008: SEMICONDUCTOR DEVICE,DIODE.

The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include special_features: RMS ETHERNET SWITCH, end_item_identification: AIRPORT SURVEILLANCE RADAR 9 (ASR9). This part is cataloged in the U.S.

Government catalog under NSN 5961-00-931-9207, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS
MRO→ MRO_GENERAL→ SD2008
NSN: 5961-00-931-9207
NIINs: 009319207, 015325967, 015369915
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 50891 — SEMICONDUCTOR TECHNOLOGY, INC. DBA SEMICONDUCTOR TECHNOLOGY INC (USA)
SPECIFICATIONS
special_featuresRMS ETHERNET SWITCH
end_item_identificationAIRPORT SURVEILLANCE RADAR 9 (ASR9)
NSN5961-00-931-9207
COMPONENT DIAGRAM
BAIL LATCH 10G SFP+ 850nm · SR (MMF, 300m) DOM: Digital Optical Monitoring TX RX LC DUPLEX 20-PIN EDGE CONNECTOR ~56.5 mm ~13.4mm SFP+ TRANSCEIVER | 10G | 850nm | SR (MMF, 300m) Hot-swappable | LC duplex fiber | DDM/DOM supported TITLE SFP+ XCVR PN SD2008 MFR OEM SEMICONDUCTOR DEVICE,DIODE
KEY FEATURES
•
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM REVERSE VOLTAGE, DC
•
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 CELSIUS JUNCTION DEGC
•
OVERALL DIAMETER: 0.085 INCHES MAXIMUM IN
•
TERMINAL LENGTH: 1.000 INCHES MINIMUM IN
•
MOUNTING METHOD: TERMINAL
•
FEATURES PROVIDED: HERMETICALLY SEALED CASE
•
CURRENT RATING PER CHARACTERISTIC: 75.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
TECHNICAL CHARACTERISTICS
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC75.0 MAXIMUM REVERSE VOLTAGE, DC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT125.0 CELSIUS JUNCTION DEGC
OVERALL DIAMETER0.085 INCHES MAXIMUM IN
TERMINAL LENGTH1.000 INCHES MINIMUM IN
MOUNTING METHODTERMINAL
OVERALL LENGTH0.220 INCHES MAXIMUM IN
FEATURES PROVIDEDHERMETICALLY SEALED CASE
CURRENT RATING PER CHARACTERISTIC75.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
MATERIALSILICON SEMICONDUCTOR
MATERIALGLASS ENCLOSURE
SUBSTITUTES & CROSS-REFERENCES 4
PG316-1BReference document
Same NSN cross-reference
Reference document — Design control — primary reference
7060751P0001Reference document
Same NSN cross-reference
Reference document — Vendor item drawing reference
7060751P1Reference document
Same NSN cross-reference
Reference document — Secondary reference
7060751-1Reference document
Same NSN cross-reference
Reference document — Secondary reference
LIFECYCLE
NSN statusActive· U.S. Government catalog
Acquisition advice: Normally procured from the manufacturer (OEM)No demilitarization required
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FREQUENTLY ASKED QUESTIONS
What is SD2008?
SD2008 is a SEMICONDUCTOR DEVICE,DIODE. It is classified as a MRO (MRO_GENERAL).
What parts can replace SD2008?
There are 4 known substitutes for SD2008: PG316-1B, 7060751P0001, 7060751P1 and 1 more. Substitute compatibility should be verified for your specific system.
What is the NSN for SD2008?
SD2008 is cataloged in the U.S. Government catalog under NSN 5961-00-931-9207. This indicates validated use in U.S. government and defense supply chains.
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