SD1379-H2 — TRANSISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

SD1379-H2: TRANSISTOR.

The TRANSISTOR is a the manufacturer industrial component. Key specifications include material: CERAMIC ENCLOSURE, overall_length: 0.640 INCHES NOMINAL IN, mounting_method: THREADED STUD(S), special_features: CERAMIC CASE CONTAINS BERYLLIUM OXIDE - HANDLE AND DISPOSE IAW HAZMAT PROCEDURES; JUNCTION PATTERN ARRANGEMENT: NPN, precious_material: GOLD, nominal_thread_size: 0.164 INCHES IN. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-062-5743, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

SD1379-H2

NSN: 5961-01-062-5743
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 08JA0 — MICROSEMI CORP. - MONTGOMERYVILLE (USA)

SPECIFICATIONS

material	CERAMIC ENCLOSURE
overall_length	0.640 INCHES NOMINAL IN
mounting_method	THREADED STUD(S)
special_features	CERAMIC CASE CONTAINS BERYLLIUM OXIDE - HANDLE AND DISPOSE IAW HAZMAT PROCEDURES; JUNCTION PATTERN ARRANGEMENT: NPN
precious_material	GOLD
nominal_thread_size	0.164 INCHES IN
internal_configuration	JUNCTION CONTACT
semiconductor_material	SILICON
thread_series_designator	UNIFIED NATIONAL COARSE (UNC)
mounting_facility_quantity	1
terminal_type_and_quantity	4 RIBBON
precious_material_and_location	CHIP METALLIZATION AND INTERNAL @WIRES GOLD
NSN	5961-01-062-5743

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 55.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 33.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 3.5 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 CELSIUS JUNCTION DEGC

•

MOUNTING FACILITY QUANTITY: 1

•

PRECIOUS MATERIAL: GOLD

•

MOUNTING METHOD: THREADED STUD(S)

•

SEMICONDUCTOR MATERIAL: SILICON

•

INTERNAL CONFIGURATION: JUNCTION CONTACT

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	55.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 33.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 3.5 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	200.0 CELSIUS JUNCTION DEGC
MOUNTING FACILITY QUANTITY	1
PRECIOUS MATERIAL	GOLD
MOUNTING METHOD	THREADED STUD(S)
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	0.640 INCHES NOMINAL IN
INTERNAL CONFIGURATION	JUNCTION CONTACT
NOMINAL THREAD SIZE	0.164 INCHES IN
CURRENT RATING PER CHARACTERISTIC	250.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC

SUBSTITUTES & CROSS-REFERENCES 6

RT-1016RSame NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

62034Reference document

Same NSN cross-reference

Reference document — Secondary reference

1379-2Reference document

Same NSN cross-reference

Reference document — Secondary reference

CTX1396XReference document

Same NSN cross-reference

Reference document — Secondary reference

352-1059-011Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

PRT9793Reference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is SD1379-H2?

SD1379-H2 is a TRANSISTOR.

What parts can replace SD1379-H2?

There are 6 known substitutes for SD1379-H2: RT-1016R, 62034, 1379-2 and 3 more. Substitute compatibility should be verified for your specific system.

What is the NSN for SD1379-H2?

SD1379-H2 is cataloged in the U.S. Government catalog under NSN 5961-01-062-5743. This indicates validated use in U.S. government and defense supply chains.

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