SCHS5000: SEMICONDUCTOR DEVICE,DIODE.
The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: SILICON, overall_width: 0.690 INCHES NOMINAL IN, overall_height: 0.380 INCHES NOMINAL IN, overall_length: 2.500 INCHES NOMINAL IN, mounting_method: TERMINAL, overall_diameter: 0.375 INCHES NOMINAL IN. This part is cataloged in the U.S.
Government catalog under NSN 5961-01-181-1199, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| material | SILICON |
| overall_width | 0.690 INCHES NOMINAL IN |
| overall_height | 0.380 INCHES NOMINAL IN |
| overall_length | 2.500 INCHES NOMINAL IN |
| mounting_method | TERMINAL |
| overall_diameter | 0.375 INCHES NOMINAL IN |
| special_features | EPOXY ENCAPSULATED; DOUBLE HEAT SINK JUNCTIONS; MIN. LEAD LENGTH 2.0 IN. IN |
| operating_temp_range | -55.0 TO 150.0 CELSIUS DEGC |
| terminal_type_and_quantity | 2 UNINSULATED WIRE LEAD |
| circuit_connection_style_designator | HALF-WAVE 1 PHASE |
| maximum_operating_temp_per_measurement_point | 175.0 CELSIUS JUNCTION DEGC |
| absolute_maximum_current_rating_per_characteristic | 4.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE |
| NSN | 5961-01-181-1199 |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 CELSIUS JUNCTION DEGC |
| OVERALL DIAMETER | 0.375 INCHES NOMINAL IN |
| MOUNTING METHOD | TERMINAL |
| OVERALL LENGTH | 2.500 INCHES MAXIMUM IN |
| MATERIAL | SILICON SEMICONDUCTOR |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |