The SEMICONDUCTOR DEVICES,UNITIZED is a the manufacturer industrial component. Key specifications include overall_length: 0.260 INCHES MAXIMUM IN, mounting_method: TERMINAL, overall_diameter: 0.370 INCHES MAXIMUM IN, special_features: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN, semiconductor_material: SILICON ALL TRANSISTOR, terminal_type_and_quantity: 6 UNINSULATED WIRE LEAD. This product is currently in active production with full OEM support.
This part is cataloged in the Federal Logistics Information System (FLIS) under NSN 5961-00-247-6846, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| overall_length | 0.260 INCHES MAXIMUM IN |
| mounting_method | TERMINAL |
| overall_diameter | 0.370 INCHES MAXIMUM IN |
| special_features | ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN |
| semiconductor_material | SILICON ALL TRANSISTOR |
| terminal_type_and_quantity | 6 UNINSULATED WIRE LEAD |
| component_name_and_quantity | 2 TRANSISTOR |
| power_rating_per_characteristic | 360.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION FIRST TRANSISTOR |
| voltage_rating_in_volts_per_characteristic | 30.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 15.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 2.5 MAXIMUM EMITTER TO BASE VOLTAGE, DC ALL TRANSISTOR |
| maximum_operating_temp_per_measurement_point | 150.0 CELSIUS JUNCTION DEGC |
| NSN | 5961-00-247-6846 |
| MOUNTING METHOD | TERMINAL |
| OVERALL LENGTH | 0.260 INCHES MAXIMUM IN |
| OVERALL DIAMETER | 0.370 INCHES MAXIMUM IN |
| COMPONENT NAME AND QUANTITY | 2 TRANSISTOR |
| SPECIAL FEATURES | ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN |
| TEST DATA DOCUMENT | 80009-151-0268-00 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |
| POWER RATING PER CHARACTERISTIC | 360.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION SECOND TRANSISTOR |
| POWER RATING PER CHARACTERISTIC | 360.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION FIRST TRANSISTOR |
| SEMICONDUCTOR MATERIAL | SILICON ALL TRANSISTOR |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 CELSIUS JUNCTION DEGC |