The SEMICONDUCTOR DEVICE,THYRISTOR is a the manufacturer industrial component. Key specifications include material: PLASTIC ENCLOSURE, overall_width: 0.400 INCHES NOMINAL IN, overall_height: 0.190 INCHES MAXIMUM IN, overall_length: 0.600 INCHES NOMINAL IN, mounting_method: UNTHREADED HOLE(S), semiconductor_material: SILICON. This product is currently in active production with full OEM support.
This part is cataloged in the Federal Logistics Information System (FLIS) under NSN 5961-00-439-0877, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| material | PLASTIC ENCLOSURE |
| overall_width | 0.400 INCHES NOMINAL IN |
| overall_height | 0.190 INCHES MAXIMUM IN |
| overall_length | 0.600 INCHES NOMINAL IN |
| mounting_method | UNTHREADED HOLE(S) |
| semiconductor_material | SILICON |
| mounting_facility_quantity | 1 |
| terminal_type_and_quantity | 3 UNINSULATED WIRE LEAD |
| power_rating_per_characteristic | 10.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION |
| current_rating_per_characteristic | 75.00 MILLIAMPERES MAXIMUM HOLDING CURRENT, DC AND 100.00 MILLIAMPERES MAXIMUM GATE TRIGGER CURRENT, DC AND 6.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL |
| voltage_rating_in_volts_per_characteristic | 200.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE AND 2.5 MAXIMUM GATE TRIGGER VOLTAGE, DC |
| maximum_operating_temp_per_measurement_point | 100.0 CELSIUS JUNCTION DEGC |
| NSN | 5961-00-439-0877 |
| POWER RATING PER CHARACTERISTIC | 10.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION |
| OVERALL WIDTH | 0.400 INCHES NOMINAL IN |
| OVERALL LENGTH | 0.600 INCHES NOMINAL IN |
| CURRENT RATING PER CHARACTERISTIC | 75.00 MILLIAMPERES MAXIMUM HOLDING CURRENT, DC AND 100.00 MILLIAMPERES MAXIMUM GATE TRIGGER CURRENT, DC AND 6.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL |
| OVERALL HEIGHT | 0.190 INCHES MAXIMUM IN |
| SEMICONDUCTOR MATERIAL | SILICON |
| MOUNTING FACILITY QUANTITY | 1 |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 100.0 CELSIUS JUNCTION DEGC |
| MOUNTING METHOD | UNTHREADED HOLE(S) |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 200.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE AND 2.5 MAXIMUM GATE TRIGGER VOLTAGE, DC |