SA2160: SEMICONDUCTOR DEVICES,UNITIZED.
The SEMICONDUCTOR DEVICES,UNITIZED is a the manufacturer industrial component. Key specifications include material: GLASS ENCLOSURE, overall_width: 0.150 INCHES MAXIMUM IN, overall_height: 0.080 INCHES MAXIMUM IN, overall_length: 0.260 INCHES MAXIMUM IN, mounting_method: TERMINAL, special_features: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN. This part is cataloged in the U.S.
Government catalog under NSN 5961-01-020-1610, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| material | GLASS ENCLOSURE |
| overall_width | 0.150 INCHES MAXIMUM IN |
| overall_height | 0.080 INCHES MAXIMUM IN |
| overall_length | 0.260 INCHES MAXIMUM IN |
| mounting_method | TERMINAL |
| special_features | ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN |
| semiconductor_material | SILICON ALL TRANSISTOR |
| terminal_type_and_quantity | 6 PIN |
| component_name_and_quantity | 2 TRANSISTOR |
| power_rating_per_characteristic | 350.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR |
| current_rating_per_characteristic | 500.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR |
| maximum_operating_temp_per_measurement_point | 200.0 CELSIUS JUNCTION DEGC |
| NSN | 5961-01-020-1610 |
| OVERALL HEIGHT | 0.080 INCHES MAXIMUM IN |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN ALL TRANSISTOR |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 CELSIUS JUNCTION DEGC |
| MOUNTING METHOD | TERMINAL |
| SEMICONDUCTOR MATERIAL | SILICON ALL TRANSISTOR |
| OVERALL LENGTH | 0.260 INCHES MAXIMUM IN |
| COMPONENT NAME AND QUANTITY | 2 TRANSISTOR |
| OVERALL WIDTH | 0.150 INCHES MAXIMUM IN |
| CURRENT RATING PER CHARACTERISTIC | 500.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR |
| SPECIAL FEATURES | ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN |