S6493M — SEMICONDUCTOR DEVICE,DIODE

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

S6493M: SEMICONDUCTOR DEVICE,DIODE.

The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: SILICON SEMICONDUCTOR, overall_length: 0.179 INCHES NOMINAL IN, mounting_method: THREADED STUD(S), nominal_thread_size: 0.250 INCHES IN, thread_series_designator: UNF, terminal_type_and_quantity: 1 THREADED STUD AND 2 TAB, SOLDER LUG. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-060-4950, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

S6493M

NSN: 5961-01-060-4950
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 18722 — HARRIS CORP SEMICONDUCTOR SECTOR (USA)

SPECIFICATIONS

material	SILICON SEMICONDUCTOR
overall_length	0.179 INCHES NOMINAL IN
mounting_method	THREADED STUD(S)
nominal_thread_size	0.250 INCHES IN
thread_series_designator	UNF
mounting_facility_quantity	1
terminal_type_and_quantity	1 THREADED STUD AND 2 TAB, SOLDER LUG
power_rating_per_characteristic	30.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
current_rating_per_characteristic	35.00 AMPERES NOMINAL ON-STATE CURRENT, RMS TOTAL
voltage_rating_in_volts_per_characteristic	600.0 NOMINAL NONREPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE, GATE TERMINAL OPEN-CIRCUITED
maximum_operating_temp_per_measurement_point	125.0 CELSIUS CASE DEGC
NSN	5961-01-060-4950

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 NOMINAL NONREPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE, GATE TERMINAL OPEN-CIRCUITED

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 CELSIUS CASE DEGC

•

MOUNTING FACILITY QUANTITY: 1

•

MOUNTING METHOD: THREADED STUD(S)

•

NOMINAL THREAD SIZE: 0.250 INCHES IN

•

CURRENT RATING PER CHARACTERISTIC: 35.00 AMPERES NOMINAL ON-STATE CURRENT, RMS TOTAL

•

MATERIAL: SILICON SEMICONDUCTOR

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	600.0 NOMINAL NONREPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE, GATE TERMINAL OPEN-CIRCUITED
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	125.0 CELSIUS CASE DEGC
MOUNTING FACILITY QUANTITY	1
MOUNTING METHOD	THREADED STUD(S)
OVERALL LENGTH	0.179 INCHES NOMINAL IN
NOMINAL THREAD SIZE	0.250 INCHES IN
CURRENT RATING PER CHARACTERISTIC	35.00 AMPERES NOMINAL ON-STATE CURRENT, RMS TOTAL
MATERIAL	SILICON SEMICONDUCTOR
TERMINAL TYPE AND QUANTITY	1 THREADED STUD AND 2 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR	UNF

SUBSTITUTES & CROSS-REFERENCES 3

CD0028-001Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

142C939H01Reference document

Same NSN cross-reference

Reference document — Secondary reference

154391Reference document

Same NSN cross-reference

Reference document — Advisory reference — outside the item-of-supply concept

LIFECYCLE

NSN statusActive· U.S. Government catalog

No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is S6493M?

S6493M is a SEMICONDUCTOR DEVICE,DIODE.

What parts can replace S6493M?

There are 3 known substitutes for S6493M: CD0028-001, 142C939H01, 154391. Substitute compatibility should be verified for your specific system.

What is the NSN for S6493M?

S6493M is cataloged in the U.S. Government catalog under NSN 5961-01-060-4950. This indicates validated use in U.S. government and defense supply chains.

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S6493M — SEMICONDUCTOR DEVICE,DIODE

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