S23A6B — SEMICONDUCTOR DEVICE,THYRISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

S23A6B: SEMICONDUCTOR DEVICE,THYRISTOR.

The SEMICONDUCTOR DEVICE,THYRISTOR is a the manufacturer industrial component. Key specifications include material: CERAMIC ENCLOSURE, overall_length: 1.630 INCHES NOMINAL IN, mounting_method: COMPRESSION, overall_diameter: 0.565 INCHES MAXIMUM IN, features_provided: HERMETICALLY SEALED CASE, semiconductor_material: SILICON. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-016-8489, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

S23A6B

NSN: 5961-01-016-8489
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 81483 — INFINEON TECHNOLOGIES AMERICAS CORP (USA)

SPECIFICATIONS

material	CERAMIC ENCLOSURE
overall_length	1.630 INCHES NOMINAL IN
mounting_method	COMPRESSION
overall_diameter	0.565 INCHES MAXIMUM IN
features_provided	HERMETICALLY SEALED CASE
semiconductor_material	SILICON
terminal_type_and_quantity	1 TAB, SOLDER LUG AND 1 PIN AND 1 CASE
current_rating_per_characteristic	3500.00 AMPERES MAXIMUM PEAK ON-STATE CURRENT, NONREPETITIVE
voltage_rating_in_volts_per_characteristic	600.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE AND 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
maximum_operating_temp_per_measurement_point	125.0 CELSIUS JUNCTION DEGC
NSN	5961-01-016-8489

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE AND 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 CELSIUS JUNCTION DEGC

•

OVERALL DIAMETER: 0.565 INCHES MAXIMUM IN

•

MOUNTING METHOD: COMPRESSION

•

SEMICONDUCTOR MATERIAL: SILICON

•

FEATURES PROVIDED: HERMETICALLY SEALED CASE

•

CURRENT RATING PER CHARACTERISTIC: 3500.00 AMPERES MAXIMUM PEAK ON-STATE CURRENT, NONREPETITIVE

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	600.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE AND 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	125.0 CELSIUS JUNCTION DEGC
OVERALL DIAMETER	0.565 INCHES MAXIMUM IN
MOUNTING METHOD	COMPRESSION
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	1.630 INCHES NOMINAL IN
FEATURES PROVIDED	HERMETICALLY SEALED CASE
CURRENT RATING PER CHARACTERISTIC	3500.00 AMPERES MAXIMUM PEAK ON-STATE CURRENT, NONREPETITIVE
MATERIAL	CERAMIC ENCLOSURE
TERMINAL TYPE AND QUANTITY	1 TAB, SOLDER LUG AND 1 PIN AND 1 CASE

SUBSTITUTES & CROSS-REFERENCES 3

380MReference document

Same NSN cross-reference

Reference document — Secondary reference

C380MReference document

Same NSN cross-reference

Reference document — Secondary reference

ST230C06C0Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Normally procured from the manufacturer (OEM)No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is S23A6B?

S23A6B is a SEMICONDUCTOR DEVICE,THYRISTOR.

What parts can replace S23A6B?

There are 3 known substitutes for S23A6B: 380M, C380M, ST230C06C0. Substitute compatibility should be verified for your specific system.

What is the NSN for S23A6B?

S23A6B is cataloged in the U.S. Government catalog under NSN 5961-01-016-8489. This indicates validated use in U.S. government and defense supply chains.

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S23A6B — SEMICONDUCTOR DEVICE,THYRISTOR

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