S2060F — SEMICONDUCTOR DEVICE,THYRISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

S2060F: SEMICONDUCTOR DEVICE,THYRISTOR.

The SEMICONDUCTOR DEVICE,THYRISTOR is a the manufacturer industrial component. Key specifications include material: PLASTIC ENCLOSURE, overall_width: 0.408 INCHES NOMINAL IN, overall_length: 0.363 INCHES NOMINAL IN, mounting_method: UNTHREADED HOLE(S), special_features: ONE INSULATOR AND ONE WASHER INCLUDED, semiconductor_material: SILICON. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-107-9560, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

S2060F

NSN: 5961-01-107-9560
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 34371 — RENESAS ELECTRONICS AMERICA INC (USA)

SPECIFICATIONS

material	PLASTIC ENCLOSURE
overall_width	0.408 INCHES NOMINAL IN
overall_length	0.363 INCHES NOMINAL IN
mounting_method	UNTHREADED HOLE(S)
special_features	ONE INSULATOR AND ONE WASHER INCLUDED
semiconductor_material	SILICON
mounting_facility_quantity	1
terminal_type_and_quantity	3 TAB, SOLDER LUG
power_rating_per_characteristic	0.5 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
current_rating_per_characteristic	2.50 AMPERES NOMINAL ON-STATE CURRENT, AVERAGE AND 4.00 AMPERES NOMINAL ON-STATE CURRENT, RMS TOTAL AND 2.75 AMPERES NOMINAL ON-STATE CURRENT, DC
voltage_rating_in_volts_per_characteristic	75.0 NOMINAL NONREPETITIVE PEAK REVERSE VOLTAGE AND 50.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE
maximum_operating_temp_per_measurement_point	150.0 CELSIUS AMBIENT AIR DEGC
NSN	5961-01-107-9560

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 NOMINAL NONREPETITIVE PEAK REVERSE VOLTAGE AND 50.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 CELSIUS AMBIENT AIR DEGC

•

MOUNTING FACILITY QUANTITY: 1

•

MOUNTING METHOD: UNTHREADED HOLE(S)

•

SEMICONDUCTOR MATERIAL: SILICON

•

CURRENT RATING PER CHARACTERISTIC: 2.50 AMPERES NOMINAL ON-STATE CURRENT, AVERAGE AND 4.00 AMPERES NOMINAL ON-STATE CURRENT, RMS TOTAL AND 2.75 AMPERES NOMINAL ON-STATE CURRENT, DC

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	75.0 NOMINAL NONREPETITIVE PEAK REVERSE VOLTAGE AND 50.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	150.0 CELSIUS AMBIENT AIR DEGC
MOUNTING FACILITY QUANTITY	1
MOUNTING METHOD	UNTHREADED HOLE(S)
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	0.363 INCHES NOMINAL IN
OVERALL WIDTH	0.408 INCHES NOMINAL IN
CURRENT RATING PER CHARACTERISTIC	2.50 AMPERES NOMINAL ON-STATE CURRENT, AVERAGE AND 4.00 AMPERES NOMINAL ON-STATE CURRENT, RMS TOTAL AND 2.75 AMPERES NOMINAL ON-STATE CURRENT, DC
SPECIAL FEATURES	ONE INSULATOR AND ONE WASHER INCLUDED
MATERIAL	PLASTIC ENCLOSURE

SUBSTITUTES & CROSS-REFERENCES 1

8200011Reference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Normally procured from the manufacturer (OEM)No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is S2060F?

S2060F is a SEMICONDUCTOR DEVICE,THYRISTOR.

What parts can replace S2060F?

There is 1 known substitute for S2060F: 8200011. Substitute compatibility should be verified for your specific system.

What is the NSN for S2060F?

S2060F is cataloged in the U.S. Government catalog under NSN 5961-01-107-9560. This indicates validated use in U.S. government and defense supply chains.

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S2060F — SEMICONDUCTOR DEVICE,THYRISTOR

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