S12001-163 — SEMICONDUCTOR DEVICE,THYRISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

S12001-163: SEMICONDUCTOR DEVICE,THYRISTOR.

The SEMICONDUCTOR DEVICE,THYRISTOR is a the manufacturer industrial component. Key specifications include overall_length: 0.260 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 0.500 INCHES MINIMUM IN, overall_diameter: 0.335 INCHES MINIMUM AND 0.366 INCHES MAXIMUM IN, semiconductor_material: SILICON, terminal_circle_diameter: 0.190 INCHES MINIMUM AND 0.210 INCHES MAXIMUM IN. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-118-9018, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

S12001-163

NSN: 5961-01-118-9018
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 25583 — ACRON AVIATION, INC. (USA)

SPECIFICATIONS

overall_length	0.260 INCHES MAXIMUM IN
mounting_method	TERMINAL
terminal_length	0.500 INCHES MINIMUM IN
overall_diameter	0.335 INCHES MINIMUM AND 0.366 INCHES MAXIMUM IN
semiconductor_material	SILICON
terminal_circle_diameter	0.190 INCHES MINIMUM AND 0.210 INCHES MAXIMUM IN
terminal_type_and_quantity	3 UNINSULATED WIRE LEAD
power_rating_per_characteristic	10.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
current_rating_per_characteristic	0.50 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL AND 1.00 AMPERES MAXIMUM GATE TRIGGER CURRENT, PEAK AND 50.00 AMPERES MAXIMUM PEAK NONREPETITIVE SURGE CURRENT
voltage_rating_in_volts_per_characteristic	400.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE
maximum_operating_temp_per_measurement_point	100.0 CELSIUS CASE DEGC
NSN	5961-01-118-9018

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 CELSIUS CASE DEGC

•

OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.366 INCHES MAXIMUM IN

•

TERMINAL LENGTH: 0.500 INCHES MINIMUM IN

•

MOUNTING METHOD: TERMINAL

•

SEMICONDUCTOR MATERIAL: SILICON

•

CURRENT RATING PER CHARACTERISTIC: 0.50 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL AND 1.00 AMPERES MAXIMUM GATE TRIGGER CURRENT, PEAK AND 50.00 AMPERES MAXIMUM PEAK NONREPETITIVE SURGE CURRENT

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	400.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	100.0 CELSIUS CASE DEGC
OVERALL DIAMETER	0.335 INCHES MINIMUM AND 0.366 INCHES MAXIMUM IN
TERMINAL LENGTH	0.500 INCHES MINIMUM IN
MOUNTING METHOD	TERMINAL
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	0.260 INCHES MAXIMUM IN
CURRENT RATING PER CHARACTERISTIC	0.50 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL AND 1.00 AMPERES MAXIMUM GATE TRIGGER CURRENT, PEAK AND 50.00 AMPERES MAXIMUM PEAK NONREPETITIVE SURGE CURRENT
TERMINAL TYPE AND QUANTITY	3 UNINSULATED WIRE LEAD
TERMINAL CIRCLE DIAMETER	0.190 INCHES MINIMUM AND 0.210 INCHES MAXIMUM IN

SUBSTITUTES & CROSS-REFERENCES 2

T2304DReference document

Same NSN cross-reference

Reference document — Secondary reference

L4003M7Reference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Normally procured from the manufacturer (OEM)No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is S12001-163?

S12001-163 is a SEMICONDUCTOR DEVICE,THYRISTOR.

What parts can replace S12001-163?

There are 2 known substitutes for S12001-163: T2304D, L4003M7. Substitute compatibility should be verified for your specific system.

What is the NSN for S12001-163?

S12001-163 is cataloged in the U.S. Government catalog under NSN 5961-01-118-9018. This indicates validated use in U.S. government and defense supply chains.

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S12001-163 — SEMICONDUCTOR DEVICE,THYRISTOR

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