The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include body_width: 0.390 INCHES MAXIMUM IN, body_height: 0.085 INCHES MAXIMUM IN, body_length: 0.520 INCHES MAXIMUM IN, features_provided: BIPOLAR AND PROGRAMMABLE AND 3-STATE OUTPUT, output_logic_form: TRANSISTOR-TRANSISTOR LOGIC, inclosure_material: CERAMIC. This product is currently in active production with full OEM support.
This part is cataloged in the Federal Logistics Information System (FLIS) under NSN 5962-01-171-5583, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| body_width | 0.390 INCHES MAXIMUM IN |
| body_height | 0.085 INCHES MAXIMUM IN |
| body_length | 0.520 INCHES MAXIMUM IN |
| features_provided | BIPOLAR AND PROGRAMMABLE AND 3-STATE OUTPUT |
| output_logic_form | TRANSISTOR-TRANSISTOR LOGIC |
| inclosure_material | CERAMIC |
| memory_device_type | ROM |
| storage_temp_range | -65.0 TO 150.0 CELSIUS DEGC |
| test_data_document | 82577-932892 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| operating_temp_range | -55.0 TO 125.0 CELSIUS DEGC |
| input_circuit_pattern | 12 INPUT |
| inclosure_configuration | FLAT PACK |
| NSN | 5962-01-171-5583 |
| FEATURES PROVIDED | BIPOLAR AND PROGRAMMABLE AND 3-STATE OUTPUT |
| BODY HEIGHT | 0.085 INCHES MAXIMUM IN |
| MAXIMUM POWER DISSIPATION RATING | 715.0 MILLIWATTS |
| INCLOSURE CONFIGURATION | FLAT PACK |
| MEMORY DEVICE TYPE | ROM |
| TEST DATA DOCUMENT | 82577-932892 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| TERMINAL SURFACE TREATMENT | SOLDER |
| TERMINAL TYPE AND QUANTITY | 18 FLAT LEADS |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| TIME RATING PER CHACTERISTIC | 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT NS |